- Manufacture :
- Series :
- Part Status :
- Operating Temperature :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
9 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | |||||||||||||||||||||||||
|
VIEW |
3,864
In-stock
|
Vishay Siliconix | MOSFET N-CH 200V 9A D2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263) | 3W (Ta), 74W (Tc) | N-Channel | 200V | 9A (Tc) | 400 mOhm @ 5.4A, 10V | 4V @ 250µA | 43nC @ 10V | 800pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,977
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 28A D2PAK | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263) | 3.7W (Ta), 150W (Tc) | N-Channel | 100V | 28A (Tc) | 77 mOhm @ 17A, 10V | 4V @ 250µA | 72nC @ 10V | 1700pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,338
In-stock
|
Vishay Siliconix | MOSFET N-CH 600V 20A D2PAK | E | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263) | 179W (Tc) | N-Channel | 600V | 20A (Tc) | 180 mOhm @ 11A, 10V | 4V @ 250µA | 96nC @ 10V | 1451pF @ 100V | 10V | ±30V | |||
|
VIEW |
2,367
In-stock
|
Vishay Siliconix | MOSFET N-CH 600V 32A D2PAK TO263 | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263) | 250W (Tc) | N-Channel | 650V | 32A (Tc) | 94 mOhm @ 17A, 10V | 4V @ 250µA | 132nC @ 10V | 2760pF @ 100V | 10V | ±30V | |||
|
VIEW |
3,835
In-stock
|
Vishay Siliconix | MOSFET N-CH 650V 24A D2PAK | E | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263) | 250W (Tc) | N-Channel | 650V | 24A (Tc) | 156 mOhm @ 12A, 10V | 4V @ 250µA | 122nC @ 10V | 2774pF @ 100V | 10V | ±30V | |||
|
VIEW |
1,569
In-stock
|
Vishay Siliconix | MOSFET N-CH 650V 21A D2PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263) | 208W (Tc) | N-Channel | 650V | 21A (Tc) | 180 mOhm @ 11A, 10V | 4V @ 250µA | 106nC @ 10V | 2322pF @ 100V | 10V | ±30V | |||
|
VIEW |
1,226
In-stock
|
Infineon Technologies | MOSFET N-CH 75V 120A D2PAK | HEXFET® | Not For New Designs | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263) | 300W (Tc) | N-Channel | 75V | 120A (Tc) | 4.1 mOhm @ 75A, 10V | 4V @ 150µA | 170nC @ 10V | 6920pF @ 50V | 10V | ±20V | |||
|
VIEW |
1,215
In-stock
|
Vishay Siliconix | MOSFET N-CH 100V 28A D2PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263) | 3.7W (Ta), 150W (Tc) | N-Channel | 100V | 28A (Tc) | 77 mOhm @ 17A, 10V | 4V @ 250µA | 72nC @ 10V | 1700pF @ 25V | 10V | ±20V | |||
|
VIEW |
3,835
In-stock
|
Vishay Siliconix | MOSFET N-CH 200V 9A D2PAK | - | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263) | 3W (Ta), 74W (Tc) | N-Channel | 200V | 9A (Tc) | 400 mOhm @ 5.4A, 10V | 4V @ 250µA | 43nC @ 10V | 800pF @ 25V | 10V | ±20V |