- Manufacture :
- Part Status :
- Operating Temperature :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Input Capacitance (Ciss) (Max) @ Vds :
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2 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
1,086
In-stock
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Vishay Siliconix | MOSFET N-CH 250V 8A TO-262 | - | Obsolete | Tube | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 3.8W (Ta), 88W (Tc) | N-Channel | - | 250V | 8A (Tc) | 435 mOhm @ 4.8A, 10V | 4V @ 250µA | 34nC @ 10V | 620pF @ 25V | 10V | ±20V | |||
|
VIEW |
1,760
In-stock
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STMicroelectronics | MOSFET N-CH 620V 5.5A I2PAK | SuperMESH3™ | Active | Tube | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-262-3 Long Leads, I²Pak, TO-262AA | I2PAK | 90W (Tc) | N-Channel | - | 620V | 5.5A (Tc) | 1.2 Ohm @ 2.8A, 10V | 4.5V @ 50µA | 34nC @ 10V | 875pF @ 50V | 10V | ±30V | |||
