- Series :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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11 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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GLOBAL STOCKS | |||||||||||||||||||||||||
VIEW |
3,370
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 60V 45A TO220NIS | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS | 45W (Tc) | N-Channel | 60V | 45A (Ta) | 5.8 mOhm @ 23A, 10V | 4V @ 1mA | 196nC @ 10V | 12400pF @ 10V | 10V | ±20V | ||||
VIEW |
954
In-stock
|
Rohm Semiconductor | MOSFET N-CH 600V 15A TO220 | - | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 40W (Tc) | N-Channel | 600V | 15A (Tc) | 290 mOhm @ 6.5A, 10V | 4V @ 1mA | 40nC @ 10V | 910pF @ 25V | 10V | ±20V | ||||
VIEW |
2,865
In-stock
|
Rohm Semiconductor | MOSFET N-CH 600V 24A TO220 | - | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 40W (Tc) | N-Channel | 600V | 24A (Tc) | 165 mOhm @ 11.3A, 10V | 4V @ 1mA | 70nC @ 10V | 1650pF @ 25V | 10V | ±20V | ||||
VIEW |
1,607
In-stock
|
Rohm Semiconductor | MOSFET N-CH 600V 11A TO220 | - | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 40W (Tc) | N-Channel | 600V | 11A (Tc) | 390 mOhm @ 3.8A, 10V | 4V @ 1mA | 32nC @ 10V | 670pF @ 25V | 10V | ±20V | ||||
VIEW |
3,145
In-stock
|
Rohm Semiconductor | MOSFET N-CH 600V 9A TO220 | - | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 40W (Tc) | N-Channel | 600V | 9A (Tc) | 535 mOhm @ 2.8A, 10V | 4V @ 1mA | 23nC @ 10V | 430pF @ 25V | 10V | ±20V | ||||
VIEW |
3,388
In-stock
|
Rohm Semiconductor | MOSFET N-CH 600V 7A TO220 | - | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 40W (Tc) | N-Channel | 600V | 7A (Tc) | 620 mOhm @ 2.4A, 10V | 4V @ 1mA | 20nC @ 10V | 390pF @ 25V | 10V | ±20V | ||||
VIEW |
1,902
In-stock
|
Rohm Semiconductor | MOSFET N-CH 600V 4A TO220 | - | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 40W (Tc) | N-Channel | 600V | 4A (Tc) | 980 mOhm @ 1.5A, 10V | 4V @ 1mA | 15nC @ 10V | 250pF @ 25V | 10V | ±20V | ||||
VIEW |
3,603
In-stock
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Sanken | MOSFET N-CH 250V TO-220F | - | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 35W (Tc) | N-Channel | 250V | 18A (Ta) | 250 mOhm @ 9A, 10V | 4V @ 1mA | - | 850pF @ 10V | 10V | ±20V | ||||
VIEW |
3,803
In-stock
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Sanken | MOSFET N-CH 200V TO-220F | - | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220F | 35W (Tc) | N-Channel | 200V | 18A (Ta) | 175 mOhm @ 9A, 10V | 4V @ 1mA | - | 850pF @ 10V | 10V | ±20V | ||||
VIEW |
3,003
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 75V 80A TO220SIS | U-MOSVIII-H | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220SIS | 45W (Tc) | N-Channel | 75V | 80A (Ta) | 4.5 mOhm @ 40A, 10V | 4V @ 1mA | 175nC @ 10V | 8200pF @ 10V | 10V | ±20V | ||||
VIEW |
3,977
In-stock
|
Rohm Semiconductor | MOSFET N-CH 600V 20A TO220 | - | Active | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220FM | 50W (Tc) | N-Channel | 600V | 20A (Tc) | 196 mOhm @ 10A, 10V | 4V @ 1mA | 60nC @ 10V | 1400pF @ 25V | 10V | ±20V |