Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2SK4021(Q)
RFQ
VIEW
RFQ
3,568
In-stock
Toshiba Semiconductor and Storage MOSFET N-CH 250V 4.5A PW-MOLD2 - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-251-3 Stub Leads, IPak PW-MOLD2 20W (Tc) N-Channel 250V 4.5A (Ta) 1 Ohm @ 2.5A, 10V 3.5V @ 1mA 10nC @ 10V 440pF @ 10V 10V ±20V
IRFP4232PBF
RFQ
VIEW
RFQ
819
In-stock
Infineon Technologies MOSFET N-CH 250V 60A TO-247AC HEXFET® Obsolete Bulk MOSFET (Metal Oxide) -40°C ~ 175°C (TJ) Through Hole TO-247-3 TO-247AC 430W (Tc) N-Channel 250V 60A (Tc) 35.7 mOhm @ 42A, 10V 5V @ 250µA 240nC @ 10V 7290pF @ 25V 10V ±20V
2SK3004
RFQ
VIEW
RFQ
3,603
In-stock
Sanken MOSFET N-CH 250V TO-220F - Active Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 Full Pack TO-220F 35W (Tc) N-Channel 250V 18A (Ta) 250 mOhm @ 9A, 10V 4V @ 1mA - 850pF @ 10V 10V ±20V
TN5325N3-G
RFQ
VIEW
RFQ
2,039
In-stock
Microchip Technology MOSFET N-CH 250V 0.215A TO92-3 - Active Bulk MOSFET (Metal Oxide) - Through Hole TO-226-3, TO-92-3 (TO-226AA) TO-92-3 740mW (Ta) N-Channel 250V 215mA (Ta) 7 Ohm @ 1A, 10V 2V @ 1mA - 110pF @ 25V 4.5V, 10V ±20V