- Manufacture :
- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
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2 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
779
In-stock
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ON Semiconductor | MOSFET N-CH 60V 45A TO-220ML | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220ML | 2W (Ta), 30W (Tc) | N-Channel | 60V | 45A (Ta) | 14 mOhm @ 23A, 10V | - | 67nC @ 10V | 3500pF @ 20V | 4V, 10V | ±20V | ||||
VIEW |
3,370
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 60V 45A TO220NIS | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 Full Pack | TO-220NIS | 45W (Tc) | N-Channel | 60V | 45A (Ta) | 5.8 mOhm @ 23A, 10V | 4V @ 1mA | 196nC @ 10V | 12400pF @ 10V | 10V | ±20V |