Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Drive Voltage (Max Rds On, Min Rds On) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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ON Semiconductor MOSFET N-CH 200V 0.25A TO-92 - Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) TO-92-3 350mW (Ta) N-Channel 200V 250mA (Ta) 6.4 Ohm @ 250mA, 10V 3V @ 1mA - 60pF @ 25V 10V ±20V
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ON Semiconductor MOSFET N-CH 200V 0.25A TO-92 - Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) TO-92-3 350mW (Ta) N-Channel 200V 250mA (Ta) 14 Ohm @ 200mA, 10V 3V @ 1mA - 60pF @ 25V 2.6V, 10V ±20V
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ON Semiconductor MOSFET N-CH 60V 200MA TO-92 - Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-226-3, TO-92-3 (TO-226AA) TO-92-3 350mW (Tc) N-Channel 60V 200mA (Ta) 5 Ohm @ 500mA, 10V 3V @ 1mA - 60pF @ 25V 4.5V, 10V ±20V
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ON Semiconductor MOSFET P-CH 60V 180MA TO92 - Obsolete Bulk MOSFET (Metal Oxide) - Through Hole TO-226-3, TO-92-3 (TO-226AA) TO-92-3 - P-Channel 60V 180mA (Ta) 10 Ohm @ 500mA, 10V 3.5V @ 1mA 1.43nC @ 10V 60pF @ 25V - -