Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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2SK2866(F)
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1,644
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Toshiba Semiconductor and Storage MOSFET N-CH 600V 10A TO-220AB - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 125W (Tc) N-Channel 600V 10A (Ta) 750 mOhm @ 5A, 10V 4V @ 1mA 45nC @ 10V 2040pF @ 10V 10V ±30V
2SK2544(F)
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RFQ
1,016
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Toshiba Semiconductor and Storage MOSFET N-CH 600V 6A TO-220AB - Obsolete Bulk MOSFET (Metal Oxide) 150°C (TJ) Through Hole TO-220-3 TO-220AB 80W (Tc) N-Channel 600V 6A (Ta) 1.25 Ohm @ 3A, 10V 4V @ 1mA 30nC @ 10V 1300pF @ 10V 10V ±30V
SIHP7N60E-GE3
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3,389
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Vishay Siliconix MOSFET N-CH 600V 7A TO-220AB - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 78W (Tc) N-Channel 600V 7A (Tc) 600 mOhm @ 3.5A, 10V 4V @ 250µA 40nC @ 10V 680pF @ 100V 10V ±30V
SIHP33N60E-GE3
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RFQ
2,503
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Vishay Siliconix MOSFET N-CH 600V 33A TO-220AB - Active Bulk MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Through Hole TO-220-3 TO-220AB 278W (Tc) N-Channel 600V 33A (Tc) 99 mOhm @ 16.5A, 10V 4V @ 250µA 150nC @ 10V 3508pF @ 100V 10V ±30V