- Manufacture :
- Part Status :
- Operating Temperature :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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4 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,644
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 10A TO-220AB | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 125W (Tc) | N-Channel | 600V | 10A (Ta) | 750 mOhm @ 5A, 10V | 4V @ 1mA | 45nC @ 10V | 2040pF @ 10V | 10V | ±30V | |||
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VIEW |
1,016
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 600V 6A TO-220AB | - | Obsolete | Bulk | MOSFET (Metal Oxide) | 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 80W (Tc) | N-Channel | 600V | 6A (Ta) | 1.25 Ohm @ 3A, 10V | 4V @ 1mA | 30nC @ 10V | 1300pF @ 10V | 10V | ±30V | |||
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VIEW |
3,389
In-stock
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Vishay Siliconix | MOSFET N-CH 600V 7A TO-220AB | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 78W (Tc) | N-Channel | 600V | 7A (Tc) | 600 mOhm @ 3.5A, 10V | 4V @ 250µA | 40nC @ 10V | 680pF @ 100V | 10V | ±30V | |||
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VIEW |
2,503
In-stock
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Vishay Siliconix | MOSFET N-CH 600V 33A TO-220AB | - | Active | Bulk | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Through Hole | TO-220-3 | TO-220AB | 278W (Tc) | N-Channel | 600V | 33A (Tc) | 99 mOhm @ 16.5A, 10V | 4V @ 250µA | 150nC @ 10V | 3508pF @ 100V | 10V | ±30V |