Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Microsemi Corporation POWER MOSFET - SIC - Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 273W (Tc) N-Channel 1200V 51A (Tc) 55 mOhm @ 40A, 20V 2.5V @ 1mA 235nC @ 20V - 20V +25V, -10V
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2,737
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Microsemi Corporation POWER MOSFET - SIC - Obsolete Bulk SiCFET (Silicon Carbide) -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 165W (Tc) N-Channel 700V 49A (Tc) 70 mOhm @ 32.5A, 20V 2.5V @ 1mA 125nC @ 20V - 20V +25V, -10V
VS-FC220SA20
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3,730
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Vishay Semiconductor Diodes Division MOSFET N-CH 200V 220A SOT-227 - Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 789W (Tc) N-Channel 200V 220A (Tc) 7 mOhm @ 150A, 10V 5.1V @ 500µA 350nC @ 10V 21000pF @ 50V 10V ±30V
VS-FC80NA20
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3,624
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Vishay Semiconductor Diodes Division MOSFET N-CH 200V 108A - Active Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 405W (Tc) N-Channel 200V 108A (Tc) 14 mOhm @ 80A, 10V 5.5V @ 250µA 161nC @ 10V 10720pF @ 50V 10V ±30V
APT40SM120J
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3,366
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Microsemi Corporation MOSFET N-CH 1200V 32A SOT227 - Obsolete Bulk MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Chassis Mount SOT-227-4, miniBLOC SOT-227 165W (Tc) N-Channel 1200V 32A (Tc) 100 mOhm @ 20A, 20V 3V @ 1mA (Typ) 130nC @ 20V 2560pF @ 1000V 20V +25V, -10V