- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Applied Filters :
3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,045
In-stock
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Vishay Siliconix | MOSFET N-CH 25V 60A POWERPAK1212 | TrenchFET® Gen IV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | PowerPAK® 1212-8S (3.3x3.3) | 57W (Tc) | N-Channel | - | 25V | 60A (Tc) | 1.52 mOhm @ 15A, 10V | 2V @ 250µA | 35nC @ 4.5V | 3640pF @ 10V | 4.5V, 10V | +20V, -16V | |||
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VIEW |
1,543
In-stock
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Vishay Siliconix | MOSFET N-CHAN 40V POWERPAK 1212- | TrenchFET® Gen IV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | PowerPAK® 1212-8S | 5W (Ta), 65.7W (Tc) | N-Channel | - | 40V | 37.5A (Ta), 60A (Tc) | 1.98 mOhm @ 10A, 10V | 2.4V @ 250µA | 89nC @ 10V | 4270pF @ 20V | 4.5V, 10V | +20V, -16V | |||
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VIEW |
1,262
In-stock
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Vishay Siliconix | MOSFET N-CHANNEL 30V 40A 1212-8S | TrenchFET® Gen IV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8S | PowerPAK® 1212-8S (3.3x3.3) | 57W (Tc) | N-Channel | - | 30V | 40A (Tc) | 2.1 mOhm @ 10A, 10V | 2.2V @ 250µA | 68nC @ 10V | 3420pF @ 15V | 4.5V, 10V | +20V, -16V |