- Part Status :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
4 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GLOBAL STOCKS | ||||||||||||||||||||||||||
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VIEW |
3,090
In-stock
|
Texas Instruments | MOSFET P-CH 12V 2.2A 4DSBGA | NexFET™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-UFBGA, DSBGA | 4-DSBGA (1x1) | 1W (Ta) | P-Channel | - | 12V | 2.2A (Tc) | 82 mOhm @ 500mA, 4.5V | 1V @ 250µA | 2.4nC @ 4.5V | 325pF @ 6V | 1.5V, 4.5V | -6V | |||
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|
VIEW |
749
In-stock
|
Texas Instruments | MOSFET P-CH 12V 2.2A 4DSBGA | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-UFBGA, DSBGA | 4-DSBGA (1x1) | 1W (Ta) | P-Channel | - | 12V | 2.2A (Ta) | 53 mOhm @ 500mA, 4.5V | 900mV @ 250µA | 3.8nC @ 4.5V | 512pF @ 6V | 1.5V, 4.5V | -6V | |||
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|
VIEW |
1,693
In-stock
|
Texas Instruments | MOSFET P-CH 20V 1.6A 4DSBGA | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-UFBGA, DSBGA | 4-DSBGA (1x1) | 1W (Ta) | P-Channel | - | 20V | 1.6A (Ta) | 47 mOhm @ 1A, 4.5V | 1.1V @ 250µA | 2.9nC @ 4.5V | 478pF @ 10V | 2.5V, 4.5V | -6V | |||
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|
VIEW |
3,188
In-stock
|
Texas Instruments | MOSFET P-CH 12V 2.2A 4DSBGA | NexFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 4-UFBGA, DSBGA | 4-DSBGA (1x1) | 1W (Ta) | P-Channel | - | 12V | 2.2A (Ta) | 53 mOhm @ 500mA, 4.5V | 900mV @ 250µA | 3.8nC @ 4.5V | 512pF @ 6V | 1.5V, 4.5V | -6V | |||
