Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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AO4724
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2,518
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Alpha & Omega Semiconductor Inc. MOSFET N-CH 30V 7.7A 8SOIC SRFET™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC 1.7W (Ta) N-Channel Schottky Diode (Body) 30V 7.7A (Ta) 17.5 mOhm @ 10.5A, 10V 2V @ 250µA 16nC @ 10V 900pF @ 15V 4.5V, 10V ±20V
BSC032NE2LSATMA1
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2,338
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Infineon Technologies MOSFET N-CH 25V 22A TDSON-8 OptiMOS™ Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 2.8W (Ta), 78W (Tc) N-Channel - 25V 22A (Ta), 84A (Tc) 3.2 mOhm @ 30A, 10V 2V @ 250µA 16nC @ 10V 1200pF @ 12V 4.5V, 10V ±20V
BSZ036NE2LSATMA1
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3,410
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Infineon Technologies MOSFET N-CH 25V 16A TSDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 2.1W (Ta), 37W (Tc) N-Channel - 25V 16A (Ta), 40A (Tc) 3.6 mOhm @ 20A, 10V 2V @ 250µA 16nC @ 10V 1200pF @ 12V 4.5V, 10V ±20V
FDD7N25LZTM
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1,624
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ON Semiconductor MOSFET N-CH 250V 6.2A DPAK-3 UniFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 56W (Tc) N-Channel - 250V 6.2A (Tc) 550 mOhm @ 3.1A, 10V 2V @ 250µA 16nC @ 10V 635pF @ 25V 5V, 10V ±20V