Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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AO4724
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2,518
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Alpha & Omega Semiconductor Inc. MOSFET N-CH 30V 7.7A 8SOIC SRFET™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC 1.7W (Ta) N-Channel Schottky Diode (Body) 30V 7.7A (Ta) 17.5 mOhm @ 10.5A, 10V 2V @ 250µA 16nC @ 10V 900pF @ 15V 4.5V, 10V ±20V
AO4720
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2,559
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Alpha & Omega Semiconductor Inc. MOSFET N-CH 30V 13A 8SOIC SRFET™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SOIC 3.1W (Ta) N-Channel Schottky Diode (Body) 30V 13A (Ta) 11 mOhm @ 13A, 10V 2V @ 250µA 30nC @ 10V 1600pF @ 15V 4.5V, 10V ±20V
BSC010N04LSIATMA1
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1,645
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Infineon Technologies MOSFET N-CH 40V 37A 8TDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 FL 2.5W (Ta), 139W (Tc) N-Channel Schottky Diode (Body) 40V 37A (Ta), 100A (Tc) 1.05 mOhm @ 50A, 10V 2V @ 250µA 87nC @ 10V 6200pF @ 20V 4.5V, 10V ±20V
BSZ0904NSIATMA1
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3,433
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Infineon Technologies MOSFET N-CH 30V 40A TSDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8-FL 2.1W (Ta), 37W (Tc) N-Channel Schottky Diode (Body) 30V 18A (Ta), 40A (Tc) 4 mOhm @ 30A, 10V 2V @ 250µA 11nC @ 4.5V 1463pF @ 15V 4.5V, 10V ±20V