Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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BSZ035N03MSGATMA1
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Infineon Technologies MOSFET N-CH 30V 40A TSDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 69W (Tc) N-Channel - 30V 18A (Ta), 40A (Tc) 3.5 mOhm @ 20A, 10V 2V @ 250µA 74nC @ 10V 5700pF @ 15V 4.5V, 10V ±20V
BSZ058N03MSGATMA1
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3,111
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Infineon Technologies MOSFET N-CH 30V 40A TSDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 45W (Tc) N-Channel - 30V 14A (Ta), 40A (Tc) 5 mOhm @ 20A, 10V 2V @ 250µA 40nC @ 10V 3100pF @ 15V 4.5V, 10V ±20V
BSZ088N03MSGATMA1
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916
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Infineon Technologies MOSFET N-CH 30V 40A TSDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 35W (Tc) N-Channel - 30V 11A (Ta), 40A (Tc) 8 mOhm @ 20A, 10V 2V @ 250µA 27nC @ 10V 2100pF @ 15V 4.5V, 10V ±20V
BSZ100N03MSGATMA1
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3,396
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Infineon Technologies MOSFET N-CH 30V 40A TDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 30W (Tc) N-Channel - 30V 10A (Ta), 40A (Tc) 9.1 mOhm @ 20A, 10V 2V @ 250µA 23nC @ 10V 1700pF @ 15V 4.5V, 10V ±20V
BSZ130N03MSGATMA1
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1,348
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Infineon Technologies MOSFET N-CH 30V 35A TSDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 25W (Tc) N-Channel - 30V 9A (Ta), 35A (Tc) 11.5 mOhm @ 20A, 10V 2V @ 250µA 17nC @ 10V 1300pF @ 15V 4.5V, 10V ±20V
BSZ0909NSATMA1
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2,924
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Infineon Technologies MOSFET N-CH 34V 9A 8TSDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 25W (Tc) N-Channel - 34V 9A (Ta), 36A (Tc) 12 mOhm @ 20A, 10V 2V @ 250µA 17nC @ 10V 1310pF @ 15V 4.5V, 10V ±20V
BSZ050N03MSGATMA1
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1,013
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Infineon Technologies MOSFET N-CH 30V 40A TSDSON-8 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 2.1W (Ta), 48W (Tc) N-Channel - 30V 15A (Ta), 40A (Tc) 4.5 mOhm @ 20A, 10V 2V @ 250µA 46nC @ 10V 3600pF @ 15V 4.5V, 10V ±20V