- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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14 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,827
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 30V 3.2A 3DFN | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XDFN Exposed Pad | DFN1010D-3 | 400mW (Ta), 8.33W (Tc) | N-Channel | 30V | 3.2A (Ta) | 55 mOhm @ 3.2A, 10V | 2V @ 250µA | 6.3nC @ 10V | 209pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,450
In-stock
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Nexperia USA Inc. | MOSFET N-CH 30V 3.2A SOT223 | TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -65°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 8.3W (Tc) | N-Channel | 30V | 3.2A (Ta) | 100 mOhm @ 2.2A, 10V | 2.8V @ 1mA | 6nC @ 10V | 250pF @ 20V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,215
In-stock
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Infineon Technologies | MOSFET N-CH 30V 3.2A 6-TSOP | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | Micro6™(TSOP-6) | 1.7W (Ta) | N-Channel | 30V | 3.2A (Ta) | 100 mOhm @ 2.2A, 10V | 1V @ 250µA | 9.6nC @ 10V | 210pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,690
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 3.2A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 1.9W (Ta) | N-Channel | 200V | 3.2A (Ta) | 80 mOhm @ 4A, 10V | 4.5V @ 250µA | 42nC @ 10V | - | 6V, 10V | ±20V | |||
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|
VIEW |
3,154
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 3.2A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 1.9W (Ta) | N-Channel | 200V | 3.2A (Ta) | 80 mOhm @ 4A, 10V | 4.5V @ 250µA | 42nC @ 10V | - | 6V, 10V | ±20V | |||
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|
VIEW |
3,567
In-stock
|
Nexperia USA Inc. | MOSFET N-CH 30V 3.2A DFN1010D-3G | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XDFN Exposed Pad | DFN1010D-3 | 400mW (Ta), 8.33W (Tc) | N-Channel | 30V | 3.2A (Ta) | 55 mOhm @ 3.2A, 10V | 2V @ 250µA | 6.3nC @ 10V | 209pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
2,277
In-stock
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Vishay Siliconix | MOSFET P-CH 60V 3.2A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 1.5W (Ta) | P-Channel | 60V | 3.2A (Ta) | 64 mOhm @ 5A, 10V | 3V @ 250µA | 40nC @ 10V | - | 4.5V, 10V | ±20V | |||
|
VIEW |
1,772
In-stock
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ON Semiconductor | MOSFET N-CH 100V 3.2A SOT-223-4 | PowerTrench® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223-4 | 2.2W (Ta) | N-Channel | 100V | 3.2A (Ta) | 108 mOhm @ 3.2A, 10V | 2.2V @ 250µA | 7nC @ 10V | 315pF @ 50V | 4.5V, 10V | ±20V | |||
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|
VIEW |
1,461
In-stock
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Vishay Siliconix | MOSFET P-CH 60V 3.2A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 1.5W (Ta) | P-Channel | 60V | 3.2A (Ta) | 64 mOhm @ 5A, 10V | 3V @ 250µA | 40nC @ 10V | - | 4.5V, 10V | ±20V | |||
|
VIEW |
2,524
In-stock
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Infineon Technologies | MOSFET N-CH 60V 3.2A SOT89 | OptiMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-243AA | PG-SOT89 | 1W (Ta) | N-Channel | 60V | 3.2A (Ta) | 60 mOhm @ 3.2A, 10V | 2.3V @ 15µA | 5.6nC @ 5V | 657pF @ 25V | 4.5V, 10V | ±20V | |||
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|
VIEW |
1,059
In-stock
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Infineon Technologies | MOSFET N-CH 30V 3.2A 6-TSOP | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | Micro6™(TSOP-6) | 1.7W (Ta) | N-Channel | 30V | 3.2A (Ta) | 100 mOhm @ 2.2A, 10V | 1V @ 250µA | 9.6nC @ 10V | 210pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,431
In-stock
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Diodes Incorporated | MOSFET P-CH 30V 3.2A SOT-23-6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-23-6 | 1.1W (Ta) | P-Channel | 30V | 3.2A (Ta) | 70 mOhm @ 3.2A, 10V | 1V @ 250µA | 15.8nC @ 10V | 630pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,932
In-stock
|
Diodes Incorporated | MOSFET N-CH 30V 3.2A SOT23-3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 | 1W (Ta) | N-Channel | 30V | 3.2A (Ta) | 65 mOhm @ 3.2A, 10V | 1V @ 250µA | 8.6nC @ 10V | 448pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
2,031
In-stock
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Nexperia USA Inc. | MOSFET N-CH 30V 3.2A 3DFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 3-XDFN Exposed Pad | DFN1010D-3 | 400mW (Ta), 8.33W (Tc) | N-Channel | 30V | 3.2A (Ta) | 67 mOhm @ 3.2A, 10V | 2.5V @ 250µA | 11nC @ 10V | 295pF @ 15V | 4.5V, 10V | ±20V | |||
