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- FET Feature :
- Vgs(th) (Max) @ Id :
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9 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,021
In-stock
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STMicroelectronics | MOSFET N-CH 30V 20A 8SOIC | DeepGATE™, STripFET™ VI | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.7W (Tc) | N-Channel | - | 30V | 20A (Tc) | 4.7 mOhm @ 10A, 10V | 1V @ 250µA | 17nC @ 4.5V | 1690pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,225
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET N-CH 30V 20A 8SOIC | SRFET™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SOIC | 3.1W (Ta) | N-Channel | Schottky Diode (Body) | 30V | 20A (Tc) | 4.3 mOhm @ 20A, 10V | 2.2V @ 250µA | 72nC @ 10V | 4463pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,000
In-stock
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Vishay Siliconix | MOSFET N-CH 30V 20A 1212-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® 1212-8 | PowerPAK® 1212-8 | 3.5W (Ta), 28W (Tc) | N-Channel | - | 30V | 20A (Tc) | 8.9 mOhm @ 15A, 10V | 2.5V @ 250µA | 30nC @ 10V | 997pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,299
In-stock
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Toshiba Semiconductor and Storage | MOSFET N CH 30V 20A 8SOP | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-SOP Advance (5x5) | 1.6W (Ta), 24W (Tc) | N-Channel | - | 30V | 20A (Tc) | 8.9 mOhm @ 10A, 10V | 2.3V @ 1mA | 9.8nC @ 10V | 820pF @ 15V | 10V | ±20V | |||
|
VIEW |
2,042
In-stock
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Infineon Technologies | MOSFET P-CH 30V 20A 8-SOIC | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 2.5W (Ta) | P-Channel | - | 30V | 20A (Tc) | 4.6 mOhm @ 20A, 10V | 2.4V @ 100µA | 165nC @ 10V | 5250pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
2,185
In-stock
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Vishay Siliconix | MOSFET N-CH 30V 20A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 3.9W (Ta), 29.8W (Tc) | N-Channel | - | 30V | 20A (Tc) | 12 mOhm @ 13.8A, 10V | 2.5V @ 250µA | 23nC @ 10V | 820pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
1,724
In-stock
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Vishay Siliconix | MOSFET N-CH 30V 20A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | PowerPAK® SO-8 | 29.8W (Tc) | N-Channel | - | 30V | 20A (Tc) | 8.9 mOhm @ 16.1A, 10V | 2.5V @ 250µA | 30nC @ 10V | 997pF @ 15V | 4.5V, 10V | ±20V | |||
|
VIEW |
3,898
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 30V 20A TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 22W (Tc) | N-Channel | - | 30V | 20A (Tc) | 8.9 mOhm @ 10A, 10V | 2.3V @ 100µA | 9.8nC @ 4.5V | 820pF @ 15V | 4.5V, 10V | ±20V | |||
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|
VIEW |
1,785
In-stock
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Vishay Siliconix | MOSFET N-CH 30V 20A PPAK SO-8 | TrenchFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | - | 3.9W (Ta), 29.8W (Tc) | N-Channel | - | 30V | 20A (Tc) | 9.5 mOhm @ 10A, 10V | 2.2V @ 250µA | 27nC @ 10V | 985pF @ 15V | 10V | ±20V | |||
