Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Vishay Siliconix MOSFET N-CHAN 30V POWERPAK 1212- TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8S PowerPAK® 1212-8S 3.8W (Ta), 52W (Tc) N-Channel - 30V 19A (Ta), 35A (Tc) 6 mOhm @ 19A, 10V 2.2V @ 250µA 42nC @ 10V 1700pF @ 15V 4.5V, 10V ±20V
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Vishay Siliconix MOSFET P-CHAN 30V POWERPAK 1212- TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8S PowerPAK® 1212-8S 3.8W (Ta), 52.1W (Tc) P-Channel - 30V 14.4A (Ta), 35A (Tc) 11.4 mOhm @ 14.4A, 10V 2.8V @ 250µA 71nC @ 10V 3345pF @ 15V 4.5V, 10V ±20V
SIS439DNT-T1-GE3
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Vishay Siliconix MOSFET P-CH 30V 50A 1212-8 TrenchFET® Last Time Buy Cut Tape (CT) MOSFET (Metal Oxide) -50°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8S PowerPAK® 1212-8S (3.3x3.3) 3.8W (Ta), 52.1W (Tc) P-Channel - 30V 50A (Tc) 11 mOhm @ 14A, 10V 2.8V @ 250µA 68nC @ 10V 2135pF @ 15V 4.5V, 10V ±20V
SISS27ADN-T1-GE3
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Vishay Siliconix MOSFET P-CH 30V 50A POWERPAK1212 TrenchFET® Gen III Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® 1212-8S PowerPAK® 1212-8S (3.3x3.3) 57W (Tc) P-Channel - 30V 50A (Tc) 5.1 mOhm @ 15A, 10V 2.2V @ 250µA 55nC @ 4.5V 4660pF @ 15V 4.5V, 10V ±20V