- Part Status :
- Operating Temperature :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
-
- 1.2 mOhm @ 80A, 10V (1)
- 11 mOhm @ 5.5A, 10V (1)
- 12 mOhm @ 9A, 10V (1)
- 16.9 mOhm @ 6.5A, 10V (1)
- 2.2 mOhm @ 22.5A, 10V (1)
- 2.5 mOhm @ 20A, 10V (1)
- 2.7 mOhm @ 22.5A, 10V (1)
- 4.2 mOhm @ 11.5A, 10V (1)
- 4.3 mOhm @ 20A, 10V (1)
- 6 mOhm @ 13.5A, 10V (1)
- 6.3 mOhm @ 10A, 10V (1)
- 6.4 mOhm @ 13A, 10V (1)
- 8 mOhm @ 11A, 10V (1)
- 8.3 mOhm @ 11A, 10V (3)
- 8.9 mOhm @ 10A, 10V (1)
- 9.9 mOhm @ 10.5A, 10V (1)
- Drive Voltage (Max Rds On, Min Rds On) :
- Applied Filters :
18 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GLOBAL STOCKS | ||||||||||||||||||||||||||
VIEW |
1,652
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 21A SBD 8TSON | U-MOSV-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 21A (Ta) | 9.9 mOhm @ 10.5A, 10V | 2.3V @ 1mA | 20nC @ 10V | 1900pF @ 10V | 4.5V, 10V | ±20V | ||||
VIEW |
1,912
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | U-MOSVI-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 27W (Tc) | N-Channel | - | 30V | 22A (Ta) | 8 mOhm @ 11A, 10V | 2.3V @ 200µA | 27nC @ 10V | 2200pF @ 10V | 4.5V, 10V | ±20V | ||||
VIEW |
3,350
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 26A 8TSON | U-MOSVI-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 26A (Ta) | 6.4 mOhm @ 13A, 10V | 2.3V @ 500µA | 35nC @ 10V | 2900pF @ 10V | 4.5V, 10V | ±20V | ||||
VIEW |
1,698
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | U-MOSV-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 22A (Ta) | 8.3 mOhm @ 11A, 10V | 2.5V @ 1mA | 27nC @ 10V | 2500pF @ 10V | 4.5V, 10V | ±20V | ||||
VIEW |
3,576
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 40A 8TSON-ADV | U-MOSVIII | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 35W (Tc) | N-Channel | - | 30V | 40A (Ta) | 2.5 mOhm @ 20A, 10V | 2.3V @ 500µA | 40nC @ 10V | 2230pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
3,282
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 20A 8TSON-ADV | U-MOSVIII | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 19W (Tc) | N-Channel | - | 30V | 20A (Ta) | 6.3 mOhm @ 10A, 10V | 2.3V @ 200µA | 24nC @ 10V | 1370pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
3,848
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 13A 8TSON | U-MOSVI-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 22W (Tc) | N-Channel | - | 30V | 13A (Ta) | 16.9 mOhm @ 6.5A, 10V | 2.3V @ 200µA | 17nC @ 10V | 1300pF @ 10V | 4.5V, 10V | ±20V | ||||
VIEW |
1,607
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | U-MOSV-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 22A (Ta) | 8.3 mOhm @ 11A, 10V | 2.5V @ 1mA | 27nC @ 10V | 2500pF @ 10V | 4.5V, 10V | ±20V | ||||
VIEW |
3,628
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 22A 8TSON | U-MOSV-H | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 30W (Tc) | N-Channel | - | 30V | 22A (Ta) | 8.3 mOhm @ 11A, 10V | 2.5V @ 1mA | 27nC @ 10V | 2500pF @ 10V | 4.5V, 10V | ±20V | ||||
VIEW |
1,207
In-stock
|
Toshiba Semiconductor and Storage | MOSFET P-CH 30V 18A 8TSON | U-MOSV | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 27W (Tc) | P-Channel | - | 30V | 18A (Ta) | 12 mOhm @ 9A, 10V | 2V @ 1mA | 38nC @ 10V | 1600pF @ 10V | 4V, 10V | ±20V | ||||
VIEW |
2,335
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 45A 8-TSON | U-MOSVIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 30V | 45A (Tc) | 2.2 mOhm @ 22.5A, 10V | 2.3V @ 500µA | 34nC @ 10V | 2230pF @ 15V | 10V | ±20V | ||||
VIEW |
1,188
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 23A 8TSON-ADV | U-MOSVIII | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 22W (Tc) | N-Channel | - | 30V | 23A (Ta) | 4.2 mOhm @ 11.5A, 10V | 2.3V @ 200µA | 24nC @ 10V | 1370pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
3,965
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 11A 8TSON-ADV | U-MOSVIII-H | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 19W (Tc) | N-Channel | - | 30V | 11A (Tc) | 11 mOhm @ 5.5A, 10V | 2.3V @ 100µA | 7.5nC @ 10V | 660pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
3,898
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 20A TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 22W (Tc) | N-Channel | - | 30V | 20A (Tc) | 8.9 mOhm @ 10A, 10V | 2.3V @ 100µA | 9.8nC @ 4.5V | 820pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
678
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N CH 30V 27A 8TSON-ADV | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 32W (Tc) | N-Channel | - | 30V | 27A (Tc) | 6 mOhm @ 13.5A, 10V | 2.3V @ 200µA | 17nC @ 10V | 1400pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
2,580
In-stock
|
Toshiba Semiconductor and Storage | X35 PB-F POWER MOSFET TRANSISTOR | U-MOSIX-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 175°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 104W (Tc) | N-Channel | - | 30V | 80A (Tc) | 1.2 mOhm @ 80A, 10V | 10V @ 10µA | 41nC @ 10V | 3900pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
908
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 63A 8TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 34W (Tc) | N-Channel | - | 30V | 40A (Tc) | 4.3 mOhm @ 20A, 10V | 2.3V @ 200µA | 14.8nC @ 10V | 1400pF @ 15V | 4.5V, 10V | ±20V | ||||
VIEW |
3,799
In-stock
|
Toshiba Semiconductor and Storage | MOSFET N-CH 30V 45A 8-TSON | U-MOSVIII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 8-PowerVDFN | 8-TSON Advance (3.3x3.3) | 700mW (Ta), 42W (Tc) | N-Channel | - | 30V | 45A (Tc) | 2.7 mOhm @ 22.5A, 10V | 2.3V @ 300µA | 21nC @ 10V | 2100pF @ 15V | 4.5V, 10V | ±20V |