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- Part Status :
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- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
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10 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,245
In-stock
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Vishay Siliconix | MOSFET P-CH 60V 1.25A SOT23-3 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 1.25W (Ta) | P-Channel | - | 60V | - | 340 mOhm @ 1.25A, 10V | 1V @ 250µA (Min) | 12nC @ 10V | - | 4.5V, 10V | ±20V | |||
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VIEW |
2,704
In-stock
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Vishay Siliconix | MOSFET N-CH 60V 2A SOT23-3 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3 (TO-236) | 1.25W (Ta) | N-Channel | - | 60V | - | 160 mOhm @ 2A, 10V | 3V @ 250µA | 10nC @ 10V | 240pF @ 25V | 4.5V, 10V | ±20V | |||
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VIEW |
3,520
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 30V 3.5A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 1.25W (Ta) | N-Channel | - | 30V | 3.5A (Ta) | 57 mOhm @ 3.5A, 10V | 3V @ 250µA | 5.5nC @ 4.5V | 555pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
3,247
In-stock
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Taiwan Semiconductor Corporation | MOSFET P-CHANNEL 30V 3A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 1.25W (Ta) | P-Channel | - | 30V | 3A (Tc) | 95 mOhm @ 3A, 10V | 3V @ 250µA | 10nC @ 10V | 565pF @ 30V | 4.5V, 10V | ±20V | |||
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VIEW |
1,909
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 40V 3.9A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 1.25W (Ta) | N-Channel | - | 40V | 3.9A (Ta) | 45 mOhm @ 3.9A, 10V | 3V @ 250µA | 10nC @ 10V | 540pF @ 20V | 4.5V, 10V | ±20V | |||
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VIEW |
3,326
In-stock
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Infineon Technologies | MOSFET N-CH 25V 5.8A SOT23 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 1.25W (Ta) | N-Channel | - | 25V | 5.8A (Ta) | 24 mOhm @ 5.8A, 10V | 2.35V @ 10µA | 5.4nC @ 10V | 430pF @ 10V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,553
In-stock
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Taiwan Semiconductor Corporation | MOSFET P-CHANNEL 30V 3A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 1.25W (Ta) | P-Channel | - | 30V | 3A (Ta) | 60 mOhm @ 3A, 10V | 3V @ 250µA | 2.7nC @ 10V | 551.57pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
1,826
In-stock
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Taiwan Semiconductor Corporation | MOSFET N-CHANNEL 60V 3A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 1.25W (Ta) | N-Channel | - | 60V | 3A (Ta) | 156 mOhm @ 3A, 10V | 2.5V @ 250µA | 4.3nC @ 4.5V | 511pF @ 15V | 4.5V, 10V | ±20V | |||
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VIEW |
1,363
In-stock
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Infineon Technologies | MOSFET P-CH 30V 3A SOT-23 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.25W (Ta) | P-Channel | - | 30V | 3A (Ta) | 98 mOhm @ 3A, 10V | 2.5V @ 250µA | 14nC @ 10V | 510pF @ 25V | 4.5V, 10V | ±20V | |||
|
VIEW |
1,296
In-stock
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Infineon Technologies | MOSFET P-CH 30V 2.3A SOT-23-3 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.25W (Ta) | P-Channel | - | 30V | 2.3A (Ta) | 165 mOhm @ 2.3A, 10V | 2.4V @ 10µA | 2nC @ 4.5V | 160pF @ 25V | 4.5V, 10V | ±20V |