Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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FDZ294N
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1,558
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ON Semiconductor MOSFET N-CH 20V 6A 9-BGA PowerTrench® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 9-VFBGA 9-BGA (1.5x1.6) 1.7W (Ta) N-Channel - 20V 6A (Ta) 23 mOhm @ 6A, 4.5V 1.5V @ 250µA 10nC @ 4.5V 670pF @ 10V 2.5V, 4.5V ±12V
FDZ493P
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1,222
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ON Semiconductor MOSFET P-CH 20V 4.6A 9-BGA PowerTrench® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 9-WFBGA 9-BGA (1.5x1.5) 1.7W (Ta) P-Channel - 20V 4.6A (Ta) 46 mOhm @ 4.6A, 4.5V 1.5V @ 250µA 11nC @ 4.5V 754pF @ 10V 2.5V, 4.5V ±12V
IRLMS4502TR
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RFQ
625
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Infineon Technologies MOSFET P-CH 12V 5.5A 6-TSOP HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Micro6™(TSOP-6) 1.7W (Ta) P-Channel - 12V 5.5A (Ta) 42 mOhm @ 5.5A, 4.5V 600mV @ 250µA 33nC @ 5V 1820pF @ 10V 2.5V, 4.5V ±12V
FDFM2N111
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2,086
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ON Semiconductor MOSFET N-CH 20V 4A 3X3 MLP PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 6-MLP, Power33 MicroFET 3x3mm 1.7W (Ta) N-Channel Schottky Diode (Isolated) 20V 4A (Ta) 100 mOhm @ 4A, 4.5V 1.5V @ 250µA 3.8nC @ 4.5V 273pF @ 10V 2.5V, 4.5V ±12V