Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRLR3410TRLPBF
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1,222
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Infineon Technologies MOSFET N-CH 100V 17A DPAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 79W (Tc) N-Channel - 100V 17A (Tc) 105 mOhm @ 10A, 10V 2V @ 250µA 34nC @ 5V 800pF @ 25V 4V, 10V ±16V
IRLR3410TRPBF
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RFQ
679
In-stock
Infineon Technologies MOSFET N-CH 100V 17A DPAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 79W (Tc) N-Channel - 100V 17A (Tc) 105 mOhm @ 10A, 10V 2V @ 250µA 34nC @ 5V 800pF @ 25V 4V, 10V ±16V
AUIRLR3410TRL
RFQ
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RFQ
1,667
In-stock
Infineon Technologies MOSFET N-CH 100V 17A DPAK Automotive, AEC-Q101, HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 79W (Tc) N-Channel - 100V 17A (Tc) 105 mOhm @ 10A, 10V 2V @ 250µA 34nC @ 5V 800pF @ 25V 4V, 10V ±16V
STS9NF3LL
RFQ
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RFQ
1,568
In-stock
STMicroelectronics MOSFET N-CH 30V 9A 8-SOIC STripFET™ II Obsolete Cut Tape (CT) MOSFET (Metal Oxide) 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Tc) N-Channel - 30V 9A (Tc) 19 mOhm @ 4.5A, 10V 1V @ 250µA 17nC @ 5V 800pF @ 25V 4.5V, 10V ±16V
STD35NF3LLT4
RFQ
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RFQ
2,139
In-stock
STMicroelectronics MOSFET N-CH 30V 35A DPAK STripFET™ II Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 50W (Tc) N-Channel - 30V 35A (Tc) 19.5 mOhm @ 17.5A, 10V 2.5V @ 250µA 17nC @ 5V 800pF @ 25V 4.5V, 10V ±16V