Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Vgs(th) (Max) @ Id :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SI4114DY-T1-GE3
RFQ
VIEW
RFQ
2,118
In-stock
Vishay Siliconix MOSFET N-CH 20V 20A 8-SOIC TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta), 5.7W (Tc) N-Channel - 20V 20A (Tc) 6 mOhm @ 10A, 10V 2.1V @ 250µA 95nC @ 10V 3700pF @ 10V 4.5V, 10V ±16V
SI4114DY-T1-E3
RFQ
VIEW
RFQ
2,802
In-stock
Vishay Siliconix MOSFET N-CH 20V 20A 8-SOIC TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta), 5.7W (Tc) N-Channel - 20V 20A (Tc) 6 mOhm @ 10A, 10V 2.1V @ 250µA 95nC @ 10V 3700pF @ 10V 4.5V, 10V ±16V
IPC100N04S5L1R5ATMA1
RFQ
VIEW
RFQ
1,136
In-stock
Infineon Technologies MOSFET N-CH 40V 100A 8TDSON OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PG-TDSON-8 115W (Tc) N-Channel - 40V 100A (Tc) 1.5 mOhm @ 50A, 10V 2V @ 60µA 95nC @ 10V 5340pF @ 25V 4.5V, 10V ±16V