Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRLS4030TRL7PP
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3,983
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Infineon Technologies MOSFET N-CH 100V 190A D2PAK-7 HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab), TO-263CB D2PAK (7-Lead) 370W (Tc) N-Channel - 100V 190A (Tc) 3.9 mOhm @ 110A, 10V 2.5V @ 250µA 140nC @ 4.5V 11490pF @ 50V 4.5V, 10V ±16V
IRL3803STRLPBF
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1,252
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Infineon Technologies MOSFET N-CH 30V 140A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 200W (Tc) N-Channel - 30V 140A (Tc) 6 mOhm @ 71A, 10V 1V @ 250µA 140nC @ 4.5V 5000pF @ 25V 4.5V, 10V ±16V
IRLS3036TRLPBF
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3,491
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Infineon Technologies MOSFET N-CH 60V 195A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 380W (Tc) N-Channel - 60V 195A (Tc) 2.4 mOhm @ 165A, 10V 2.5V @ 250µA 140nC @ 4.5V 11210pF @ 50V 4.5V, 10V ±16V