Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STS10PF30L
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STMicroelectronics MOSFET P-CH 30V 10A 8-SOIC STripFET™ II Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Tc) P-Channel - 30V 10A (Tc) 14 mOhm @ 5A, 10V 1V @ 250µA 39nC @ 4.5V 2300pF @ 25V 4.5V, 10V ±16V
IRF6894MTR1PBF
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620
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Infineon Technologies MOSFET N-CH 25V 32A DIRECTFET HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MX DIRECTFET™ MX 2.1W (Ta), 54W (Tc) N-Channel Schottky Diode (Body) 25V 32A (Ta), 160A (Tc) 1.3 mOhm @ 33A, 10V 2.1V @ 100µA 39nC @ 4.5V 4160pF @ 13V 4.5V, 10V ±16V
IRF6894MTRPBF
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Infineon Technologies MOSFET N-CH 25V 32A DIRECTFET HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount DirectFET™ Isometric MX DIRECTFET™ MX 2.1W (Ta), 54W (Tc) N-Channel Schottky Diode (Body) 25V 32A (Ta), 160A (Tc) 1.3 mOhm @ 33A, 10V 2.1V @ 100µA 39nC @ 4.5V 4160pF @ 13V 4.5V, 10V ±16V