Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
IPB45N06S3L-13
RFQ
VIEW
RFQ
3,583
In-stock
Infineon Technologies MOSFET N-CH 55V 45A TO-263 OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 65W (Tc) N-Channel - 55V 45A (Tc) 13.1 mOhm @ 26A, 10V 2.2V @ 30µA 75nC @ 10V 3600pF @ 25V 5V, 10V ±16V
Default Photo
RFQ
VIEW
RFQ
684
In-stock
ON Semiconductor PT8P 40V LL DPAK PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-PAK (TO-252) 150W (Tj) P-Channel - 40V 90A (Tc) 7.5 mOhm @ 70A, 10V 3V @ 250µA 75nC @ 10V 3350pF @ 20V 4.5V, 10V ±16V
IPB80N03S4L03ATMA1
RFQ
VIEW
RFQ
2,058
In-stock
Infineon Technologies MOSFET N-CH 30V 80A TO263-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 94W (Tc) N-Channel - 30V 80A (Tc) 3.3 mOhm @ 80A, 10V 2.2V @ 45µA 75nC @ 10V 5100pF @ 25V 4.5V, 10V ±16V
IPD90N03S4L03ATMA1
RFQ
VIEW
RFQ
3,379
In-stock
Infineon Technologies MOSFET N-CH 30V 90A TO252-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 94W (Tc) N-Channel - 30V 90A (Tc) 3.3 mOhm @ 90A, 10V 2.2V @ 45µA 75nC @ 10V 5100pF @ 25V 4.5V, 10V ±16V