Supplier Device Package :
Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Current - Continuous Drain (Id) @ 25°C :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
SI4114DY-T1-GE3
RFQ
VIEW
RFQ
2,118
In-stock
Vishay Siliconix MOSFET N-CH 20V 20A 8-SOIC TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta), 5.7W (Tc) N-Channel - 20V 20A (Tc) 6 mOhm @ 10A, 10V 2.1V @ 250µA 95nC @ 10V 3700pF @ 10V 4.5V, 10V ±16V
SI4114DY-T1-E3
RFQ
VIEW
RFQ
2,802
In-stock
Vishay Siliconix MOSFET N-CH 20V 20A 8-SOIC TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta), 5.7W (Tc) N-Channel - 20V 20A (Tc) 6 mOhm @ 10A, 10V 2.1V @ 250µA 95nC @ 10V 3700pF @ 10V 4.5V, 10V ±16V
NVD5C688NLT4G
RFQ
VIEW
RFQ
3,988
In-stock
ON Semiconductor MOSFET N-CHANNEL 60V 17A DPAK Automotive, AEC-Q101 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 18W (Tc) N-Channel - 60V 17A (Tc) 27.4 mOhm @ 10A, 10V 2.1V @ 250µA 3.4nC @ 4.5V 400pF @ 25V 4.5V, 10V ±16V