Supplier Device Package :
Power Dissipation (Max) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRLH5034TR2PBF
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2,129
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Infineon Technologies MOSFET N-CH 40V 100A 5X6 PQFN HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PQFN (5x6) 3.6W (Ta), 156W (Tc) N-Channel - 40V 29A (Ta), 100A (Tc) 2.4 mOhm @ 50A, 10V 2.5V @ 150µA 82nC @ 10V 4730pF @ 25V 4.5V, 10V ±16V
IRLH5034TRPBF
RFQ
VIEW
RFQ
2,591
In-stock
Infineon Technologies MOSFET N-CH 40V 100A 8-PQFN HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN 8-PQFN (5x6) 3.6W (Ta) N-Channel - 40V 29A (Ta), 100A (Tc) 2.4 mOhm @ 50A, 10V 2.5V @ 150µA 82nC @ 10V 4730pF @ 25V 4.5V, 10V ±16V