Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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HUF76429S3ST
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1,045
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ON Semiconductor MOSFET N-CH 60V 47A D2PAK UltraFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 110W (Tc) N-Channel - 60V 47A (Tc) 22 mOhm @ 47A, 10V 3V @ 250µA 46nC @ 10V 1480pF @ 25V 4.5V, 10V ±16V
BUK6213-30C,118
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3,016
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Nexperia USA Inc. MOSFET N-CH 30V 47A DPAK Automotive, AEC-Q101, TrenchMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 DPAK 60W (Tc) N-Channel - 30V 47A (Tc) 14 mOhm @ 10A, 10V 2.8V @ 1mA 19.5nC @ 10V 1108pF @ 25V 10V ±16V
IRLZ44NSTRLPBF
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3,503
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Infineon Technologies MOSFET N-CH 55V 47A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 110W (Tc) N-Channel - 55V 47A (Tc) 22 mOhm @ 25A, 10V 2V @ 250µA 48nC @ 5V 1700pF @ 25V 4V, 10V ±16V