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- Series :
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- Supplier Device Package :
- Power Dissipation (Max) :
- Rds On (Max) @ Id, Vgs :
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3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,820
In-stock
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Infineon Technologies | MOSFET N-CH 55V 80A TO-263 | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 136W (Tc) | N-Channel | - | 55V | 80A (Tc) | 5.6 mOhm @ 56A, 10V | 2.2V @ 80µA | 196nC @ 10V | 9417pF @ 25V | 5V, 10V | ±16V | |||
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VIEW |
3,289
In-stock
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Infineon Technologies | MOSFET N-CH 55V 80A TO-263 | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 165W (Tc) | N-Channel | - | 55V | 80A (Tc) | 4.5 mOhm @ 69A, 10V | 2.2V @ 115µA | 273nC @ 10V | 13060pF @ 25V | 5V, 10V | ±16V | |||
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VIEW |
1,397
In-stock
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STMicroelectronics | MOSFET N-CH 40V 80A DPAK | STripFET™ III | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 110W (Tc) | N-Channel | - | 40V | 80A (Tc) | 6 mOhm @ 40A, 10V | 2.5V @ 250µA | 70nC @ 10V | 2500pF @ 25V | 5V, 10V | ±16V | |||
