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- Operating Temperature :
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16 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,562
In-stock
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Infineon Technologies | MOSFET N-CH 55V 3.8A SOT223 | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 3.8A (Ta) | 40 mOhm @ 3.8A, 10V | 2V @ 250µA | 48nC @ 10V | 870pF @ 25V | 4V, 10V | ±16V | |||
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2,387
In-stock
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Infineon Technologies | MOSFET N-CH 55V 28A DPAK | HEXFET® | Discontinued at Digi-Key | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 68W (Tc) | N-Channel | - | 55V | 28A (Tc) | 40 mOhm @ 17A, 10V | 2V @ 250µA | 25nC @ 5V | 880pF @ 25V | 4V, 10V | ±16V | |||
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1,883
In-stock
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Infineon Technologies | MOSFET N-CH 55V 104A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 200W (Tc) | N-Channel | - | 55V | 104A (Tc) | 8 mOhm @ 54A, 10V | 2V @ 250µA | 130nC @ 5V | 5000pF @ 25V | 4V, 10V | ±16V | |||
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3,508
In-stock
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Infineon Technologies | MOSFET N-CH 55V 89A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 170W (Tc) | N-Channel | - | 55V | 89A (Tc) | 10 mOhm @ 46A, 10V | 2V @ 250µA | 98nC @ 5V | 3600pF @ 25V | 4V, 10V | ±16V | |||
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2,872
In-stock
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Infineon Technologies | MOSFET N-CH 55V 18A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 45W (Tc) | N-Channel | - | 55V | 18A (Tc) | 60 mOhm @ 11A, 10V | 2V @ 250µA | 15nC @ 5V | 480pF @ 25V | 4V, 10V | ±16V | |||
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704
In-stock
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Infineon Technologies | MOSFET N-CH 55V 30A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 68W (Tc) | N-Channel | - | 55V | 30A (Tc) | 35 mOhm @ 16A, 10V | 2V @ 250µA | 25nC @ 5V | 880pF @ 25V | 4V, 10V | ±16V | |||
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3,224
In-stock
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Infineon Technologies | MOSFET N-CH 55V 28A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 68W (Tc) | N-Channel | - | 55V | 28A (Tc) | 40 mOhm @ 17A, 10V | 2V @ 250µA | 25nC @ 5V | 880pF @ 25V | 4V, 10V | ±16V | |||
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3,503
In-stock
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Infineon Technologies | MOSFET N-CH 55V 47A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 110W (Tc) | N-Channel | - | 55V | 47A (Tc) | 22 mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | 1700pF @ 25V | 4V, 10V | ±16V | |||
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3,785
In-stock
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Infineon Technologies | MOSFET N-CH 55V 5.2A SOT223 | Automotive, AEC-Q101, HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | PG-SOT223 | 1W (Ta) | N-Channel | - | 55V | 5.2A (Ta) | 40 mOhm @ 3.8A, 10V | 2V @ 250µA | 48nC @ 10V | 870pF @ 25V | 4V, 10V | ±16V | |||
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2,111
In-stock
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Infineon Technologies | MOSFET N-CH 55V 2A SOT-223 | Automotive, AEC-Q101, HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 2A (Ta) | 140 mOhm @ 2A, 10V | 2V @ 250µA | 14nC @ 10V | 230pF @ 25V | 4V, 10V | ±16V | |||
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2,437
In-stock
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Infineon Technologies | MOSFET N-CH 55V 42A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 110W (Tc) | N-Channel | - | 55V | 42A (Tc) | 27 mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | 1700pF @ 25V | 4V, 10V | ±16V | |||
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948
In-stock
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Infineon Technologies | MOSFET N-CH 55V 2A SOT223 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 2A (Ta) | 140 mOhm @ 2A, 10V | 2V @ 250µA | 14nC @ 10V | 230pF @ 25V | 4V, 10V | ±16V | |||
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VIEW |
3,346
In-stock
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Infineon Technologies | MOSFET N-CH 55V 42A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 110W (Tc) | N-Channel | - | 55V | 42A (Tc) | 27 mOhm @ 25A, 10V | 2V @ 250µA | 48nC @ 5V | 1700pF @ 25V | 4V, 10V | ±16V | |||
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VIEW |
2,692
In-stock
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Infineon Technologies | MOSFET N-CH 55V 3.8A SOT223 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 3.8A (Ta) | 40 mOhm @ 3.8A, 10V | 2V @ 250µA | 48nC @ 10V | 870pF @ 25V | 4V, 10V | ±16V | |||
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VIEW |
1,847
In-stock
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Infineon Technologies | MOSFET N-CH 55V 17A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 45W (Tc) | N-Channel | - | 55V | 17A (Tc) | 65 mOhm @ 10A, 10V | 2V @ 250µA | 15nC @ 5V | 480pF @ 25V | 4V, 10V | ±16V | |||
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VIEW |
1,985
In-stock
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Infineon Technologies | MOSFET N-CH 55V 3.1A SOT223 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-261-4, TO-261AA | SOT-223 | 1W (Ta) | N-Channel | - | 55V | 3.1A (Ta) | 65 mOhm @ 3.1A, 10V | 2V @ 250µA | 15.6nC @ 5V | 510pF @ 25V | 4V, 10V | ±16V | |||
