Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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STB16PF06LT4
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1,239
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STMicroelectronics MOSFET P-CH 60V 16A D2PAK STripFET™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 70W (Tc) P-Channel - 60V 16A (Tc) 125 mOhm @ 8A, 10V 1.5V @ 100µA 15.5nC @ 4.5V 630pF @ 25V 5V, 10V ±16V
STB16NF06LT4
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3,143
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STMicroelectronics MOSFET N-CH 60V 16A D2PAK STripFET™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 45W (Tc) N-Channel - 60V 16A (Tc) 90 mOhm @ 8A, 10V 1V @ 250µA (Min) 10nC @ 4.5V 345pF @ 25V 5V, 10V ±16V
STB55NF06LT4
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3,583
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STMicroelectronics MOSFET N-CH 60V 55A D2PAK STripFET™ II Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 95W (Tc) N-Channel - 60V 55A (Tc) 18 mOhm @ 27.5A, 10V 4.7V @ 250µA 37nC @ 4.5V 1700pF @ 25V 10V, 5V ±16V
IRLS3036TRLPBF
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3,491
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Infineon Technologies MOSFET N-CH 60V 195A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 380W (Tc) N-Channel - 60V 195A (Tc) 2.4 mOhm @ 165A, 10V 2.5V @ 250µA 140nC @ 4.5V 11210pF @ 50V 4.5V, 10V ±16V