- Manufacture :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
- Drive Voltage (Max Rds On, Min Rds On) :
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3 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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3,517
In-stock
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Diodes Incorporated | MOSFET N-CHA 60V 9.2A SO8 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.5W (Ta) | N-Channel | - | 60V | 9.2A (Ta) | 16 mOhm @ 10A, 10V | 2.5V @ 250µA | 18.9nC @ 30V | 1103pF @ 30V | 4.5V, 10V | ±16V | |||
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VIEW |
2,314
In-stock
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Diodes Incorporated | MOSFET BVDSS: 41V 60V POWERDI506 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 1.16W (Ta) | N-Channel | - | 60V | 10.6A (Ta), 31A (Tc) | 16 mOhm @ 10A, 10V | 2.5V @ 250µA | 18.9nC @ 10V | 1103pF @ 30V | 4.5V, 10V | ±16V | |||
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VIEW |
1,629
In-stock
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Nexperia USA Inc. | MOSFET N-CH 40V 42A DPAK | Automotive, AEC-Q101, TrenchMOS™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 60W (Tc) | N-Channel | - | 40V | 42A (Tc) | 16 mOhm @ 10A, 10V | 2.8V @ 1mA | 22nC @ 10V | 1170pF @ 25V | 10V | ±16V |