Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPB80N06S3L-06
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1,820
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Infineon Technologies MOSFET N-CH 55V 80A TO-263 OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 136W (Tc) N-Channel - 55V 80A (Tc) 5.6 mOhm @ 56A, 10V 2.2V @ 80µA 196nC @ 10V 9417pF @ 25V 5V, 10V ±16V
IPB120P04P4L03ATMA1
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2,883
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Infineon Technologies MOSFET P-CH 40V 120A TO263-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 136W (Tc) P-Channel - 40V 120A (Tc) 3.1 mOhm @ 100A, 10V 2.2V @ 340µA 234nC @ 10V 15000pF @ 25V 4.5V, 10V ±16V
IPD90N10S4L06ATMA1
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1,468
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Infineon Technologies MOSFET N-CH TO252-3 Automotive, AEC-Q101, OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3-313 136W (Tc) N-Channel - 100V 90A (Tc) 6.6 mOhm @ 90A, 10V 2.1V @ 90µA 98nC @ 10V 6250pF @ 25V 4.5V, 10V ±16V
IPD90N03S4L02ATMA1
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2,868
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Infineon Technologies MOSFET N-CH 30V 90A TO252-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 136W (Tc) N-Channel - 30V 90A (Tc) 2.2 mOhm @ 90A, 10V 2.2V @ 90µA 140nC @ 10V 9750pF @ 25V 4.5V, 10V ±16V