Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRL540NSTRL
RFQ
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RFQ
3,742
In-stock
Infineon Technologies MOSFET N-CH 100V 36A D2PAK HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 3.8W (Ta), 140W (Tc) N-Channel - 100V 36A (Tc) 44 mOhm @ 18A, 10V 2V @ 250µA 74nC @ 5V 1800pF @ 25V 4V, 10V ±16V
HUFA76609D3ST
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RFQ
1,300
In-stock
ON Semiconductor MOSFET N-CH 100V 10A DPAK UltraFET™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 TO-252AA 49W (Tc) N-Channel - 100V 10A (Tc) 160 mOhm @ 10A, 10V 3V @ 250µA 16nC @ 10V 425pF @ 25V 4.5V, 10V ±16V
PHT4NQ10LT,135
RFQ
VIEW
RFQ
909
In-stock
NXP USA Inc. MOSFET N-CH 100V 3.5A SC73 TrenchMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -65°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 6.9W (Tc) N-Channel - 100V 3.5A (Tc) 250 mOhm @ 1.75A, 5V 2V @ 1mA 12.2nC @ 5V 374pF @ 25V 5V ±16V
IRLH5030TR2PBF
RFQ
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RFQ
3,170
In-stock
Infineon Technologies MOSFET N-CH 100V 13A 8PQFN HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-PowerVDFN PQFN (5x6) Single Die 3.6W (Ta), 156W (Tc) N-Channel - 100V 13A (Ta), 100A (Tc) 9 mOhm @ 50A, 10V 2.5V @ 150µA 94nC @ 10V 5185pF @ 50V 4.5V, 10V ±16V