- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Current - Continuous Drain (Id) @ 25°C :
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- Input Capacitance (Ciss) (Max) @ Vds :
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9 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,682
In-stock
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Infineon Technologies | MOSFET N-CH 55V 16A DPAK | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 35W (Tc) | N-Channel | - | 55V | 16A (Tc) | 58 mOhm @ 9.6A, 10V | 3V @ 250µA | 9.9nC @ 5V | 380pF @ 25V | 4.5V, 10V | ±16V | |||
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VIEW |
3,682
In-stock
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Nexperia USA Inc. | MOSFET N-CH 55V 120A D2PAK | Automotive, AEC-Q101, TrenchMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 263W (Tc) | N-Channel | - | 55V | 120A (Tc) | 3.4 mOhm @ 25A, 10V | 2.8V @ 1mA | 191nC @ 10V | 11516pF @ 25V | 4.5V, 10V | ±16V | |||
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3,061
In-stock
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Infineon Technologies | MOSFET N-CH 55V 100A TO263-3-2 | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 300W (Tc) | N-Channel | - | 55V | 100A (Tc) | 2.7 mOhm @ 80A, 10V | 2.2V @ 230µA | 550nC @ 10V | 26240pF @ 25V | 5V, 10V | ±16V | |||
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VIEW |
1,820
In-stock
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Infineon Technologies | MOSFET N-CH 55V 80A TO-263 | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 136W (Tc) | N-Channel | - | 55V | 80A (Tc) | 5.6 mOhm @ 56A, 10V | 2.2V @ 80µA | 196nC @ 10V | 9417pF @ 25V | 5V, 10V | ±16V | |||
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VIEW |
3,289
In-stock
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Infineon Technologies | MOSFET N-CH 55V 80A TO-263 | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 165W (Tc) | N-Channel | - | 55V | 80A (Tc) | 4.5 mOhm @ 69A, 10V | 2.2V @ 115µA | 273nC @ 10V | 13060pF @ 25V | 5V, 10V | ±16V | |||
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VIEW |
3,583
In-stock
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Infineon Technologies | MOSFET N-CH 55V 45A TO-263 | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 65W (Tc) | N-Channel | - | 55V | 45A (Tc) | 13.1 mOhm @ 26A, 10V | 2.2V @ 30µA | 75nC @ 10V | 3600pF @ 25V | 5V, 10V | ±16V | |||
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2,992
In-stock
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Infineon Technologies | MOSFET N-CH 55V 100A TO-263 | OptiMOS™ | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-3-2 | 214W (Tc) | N-Channel | - | 55V | 100A (Tc) | 3.5 mOhm @ 80A, 10V | 2.2V @ 150µA | 362nC @ 10V | 17270pF @ 25V | 5V, 10V | ±16V | |||
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VIEW |
2,579
In-stock
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Infineon Technologies | MOSFET N CH 55V 16A DPAK | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 35W (Tc) | N-Channel | - | 55V | 16A (Tc) | 58 mOhm @ 9.6A, 10V | 3V @ 250µA | 9.9nC @ 5V | 380pF @ 25V | 4.5V, 10V | ±16V | |||
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VIEW |
2,192
In-stock
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STMicroelectronics | MOSFET P-CH 55V 80A D2PAK | STripFET™ II | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 300W (Tc) | P-Channel | - | 55V | 80A (Tc) | 18 mOhm @ 40A, 10V | 4V @ 250µA | 258nC @ 10V | 5500pF @ 25V | 10V | ±16V |