- Series :
- Operating Temperature :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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14 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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2,936
In-stock
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Diodes Incorporated | MOSFET N-CH 100V 1.6A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 1.3W (Ta) | N-Channel | - | 100V | 1.4A (Ta) | 220 mOhm @ 1.6A, 10V | 2.5V @ 250µA | 8.3nC @ 10V | 401pF @ 25V | 4.5V, 10V | ±16V | |||
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VIEW |
1,871
In-stock
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Infineon Technologies | MOSFET N-CH 60V 240A D2PAK-7 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | D2PAK (7-Lead) | 380W (Tc) | N-Channel | - | 60V | 240A (Tc) | 1.9 mOhm @ 180A, 10V | 2.5V @ 250µA | 160nC @ 4.5V | 11270pF @ 50V | 4.5V, 10V | ±16V | |||
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VIEW |
3,736
In-stock
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STMicroelectronics | MOSFET N-CH 100V 25A DPAK | STripFET™ II | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 100W (Tc) | N-Channel | - | 100V | 25A (Tc) | 35 mOhm @ 12.5A, 10V | 2.5V @ 250µA | 52nC @ 5V | 1710pF @ 25V | 4.5V, 10V | ±16V | |||
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VIEW |
3,983
In-stock
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Infineon Technologies | MOSFET N-CH 100V 190A D2PAK-7 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | D2PAK (7-Lead) | 370W (Tc) | N-Channel | - | 100V | 190A (Tc) | 3.9 mOhm @ 110A, 10V | 2.5V @ 250µA | 140nC @ 4.5V | 11490pF @ 50V | 4.5V, 10V | ±16V | |||
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VIEW |
3,517
In-stock
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Diodes Incorporated | MOSFET N-CHA 60V 9.2A SO8 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 8-SO | 1.5W (Ta) | N-Channel | - | 60V | 9.2A (Ta) | 16 mOhm @ 10A, 10V | 2.5V @ 250µA | 18.9nC @ 30V | 1103pF @ 30V | 4.5V, 10V | ±16V | |||
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VIEW |
2,314
In-stock
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Diodes Incorporated | MOSFET BVDSS: 41V 60V POWERDI506 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN | PowerDI5060-8 | 1.16W (Ta) | N-Channel | - | 60V | 10.6A (Ta), 31A (Tc) | 16 mOhm @ 10A, 10V | 2.5V @ 250µA | 18.9nC @ 10V | 1103pF @ 30V | 4.5V, 10V | ±16V | |||
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VIEW |
2,576
In-stock
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STMicroelectronics | MOSFET N-CH 100V 25A DPAK | STripFET™ II | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | 100W (Tc) | N-Channel | - | 100V | 25A (Tc) | 35 mOhm @ 12.5A, 10V | 2.5V @ 250µA | 52nC @ 5V | 1710pF @ 25V | 4.5V, 10V | ±16V | |||
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VIEW |
1,397
In-stock
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STMicroelectronics | MOSFET N-CH 40V 80A DPAK | STripFET™ III | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 110W (Tc) | N-Channel | - | 40V | 80A (Tc) | 6 mOhm @ 40A, 10V | 2.5V @ 250µA | 70nC @ 10V | 2500pF @ 25V | 5V, 10V | ±16V | |||
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VIEW |
1,220
In-stock
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Diodes Incorporated | MOSFET N-CH 100V 1.6A SOT-23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23 | 1.3W (Ta) | N-Channel | - | 100V | 1.4A (Ta) | 220 mOhm @ 1.6A, 10V | 2.5V @ 250µA | 8.3nC @ 10V | 401pF @ 25V | 4.5V, 10V | ±16V | |||
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VIEW |
1,804
In-stock
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Infineon Technologies | MOSFET N-CH 80V 30A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 120W (Tc) | N-Channel | - | 80V | 30A (Tc) | 28 mOhm @ 23A, 10V | 2.5V @ 250µA | 33nC @ 4.5V | 1890pF @ 25V | 4.5V, 10V | ±16V | |||
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VIEW |
2,569
In-stock
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Infineon Technologies | MOSFET N-CH 80V 30A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 120W (Tc) | N-Channel | - | 80V | 30A (Tc) | 28 mOhm @ 23A, 10V | 2.5V @ 250µA | 33nC @ 4.5V | 1890pF @ 25V | 4.5V, 10V | ±16V | |||
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VIEW |
2,504
In-stock
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ON Semiconductor | MOSFET N-CH 30V 13.7A SO-8FL | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerTDFN, 5 Leads | 5-DFN (5x6) (8-SOFL) | 890mW (Ta), 62.5W (Tc) | N-Channel | - | 30V | 13.7A (Ta), 115A (Tc) | 2.9 mOhm @ 30A, 10V | 2.5V @ 250µA | 62nC @ 11.5V | 3720pF @ 12V | 4.5V, 10V | ±16V | |||
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VIEW |
2,814
In-stock
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Infineon Technologies | MOSFET N-CH 100V 180A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 370W (Tc) | N-Channel | - | 100V | 180A (Tc) | 4.3 mOhm @ 110A, 10V | 2.5V @ 250µA | 130nC @ 4.5V | 11360pF @ 50V | 4.5V, 10V | ±16V | |||
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VIEW |
3,491
In-stock
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Infineon Technologies | MOSFET N-CH 60V 195A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 380W (Tc) | N-Channel | - | 60V | 195A (Tc) | 2.4 mOhm @ 165A, 10V | 2.5V @ 250µA | 140nC @ 4.5V | 11210pF @ 50V | 4.5V, 10V | ±16V |