Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPD60N10S4L12ATMA1
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678
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Infineon Technologies MOSFET N-CH TO252-3 Automotive, AEC-Q101, HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3-313 94W (Tc) N-Channel - 100V 60A (Tc) 12 mOhm @ 60A, 10V 2.1V @ 46µA 49nC @ 10V 3170pF @ 25V 4.5V, 10V ±16V
AUIRLR3410TRL
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1,667
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Infineon Technologies MOSFET N-CH 100V 17A DPAK Automotive, AEC-Q101, HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 79W (Tc) N-Channel - 100V 17A (Tc) 105 mOhm @ 10A, 10V 2V @ 250µA 34nC @ 5V 800pF @ 25V 4V, 10V ±16V
AUIRLL2705TR
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3,785
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Infineon Technologies MOSFET N-CH 55V 5.2A SOT223 Automotive, AEC-Q101, HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA PG-SOT223 1W (Ta) N-Channel - 55V 5.2A (Ta) 40 mOhm @ 3.8A, 10V 2V @ 250µA 48nC @ 10V 870pF @ 25V 4V, 10V ±16V
AUIRLL014NTR
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2,111
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Infineon Technologies MOSFET N-CH 55V 2A SOT-223 Automotive, AEC-Q101, HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-261-4, TO-261AA SOT-223 1W (Ta) N-Channel - 55V 2A (Ta) 140 mOhm @ 2A, 10V 2V @ 250µA 14nC @ 10V 230pF @ 25V 4V, 10V ±16V