Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IRLS3036TRL7PP
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1,871
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Infineon Technologies MOSFET N-CH 60V 240A D2PAK-7 HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab), TO-263CB D2PAK (7-Lead) 380W (Tc) N-Channel - 60V 240A (Tc) 1.9 mOhm @ 180A, 10V 2.5V @ 250µA 160nC @ 4.5V 11270pF @ 50V 4.5V, 10V ±16V
IRLS4030TRL7PP
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RFQ
3,983
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Infineon Technologies MOSFET N-CH 100V 190A D2PAK-7 HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-7, D²Pak (6 Leads + Tab), TO-263CB D2PAK (7-Lead) 370W (Tc) N-Channel - 100V 190A (Tc) 3.9 mOhm @ 110A, 10V 2.5V @ 250µA 140nC @ 4.5V 11490pF @ 50V 4.5V, 10V ±16V
IRLR2908TRPBF
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RFQ
1,804
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Infineon Technologies MOSFET N-CH 80V 30A DPAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 120W (Tc) N-Channel - 80V 30A (Tc) 28 mOhm @ 23A, 10V 2.5V @ 250µA 33nC @ 4.5V 1890pF @ 25V 4.5V, 10V ±16V
IRLR2908TRLPBF
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2,569
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Infineon Technologies MOSFET N-CH 80V 30A DPAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 D-Pak 120W (Tc) N-Channel - 80V 30A (Tc) 28 mOhm @ 23A, 10V 2.5V @ 250µA 33nC @ 4.5V 1890pF @ 25V 4.5V, 10V ±16V
IRLS4030TRLPBF
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RFQ
2,814
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Infineon Technologies MOSFET N-CH 100V 180A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 370W (Tc) N-Channel - 100V 180A (Tc) 4.3 mOhm @ 110A, 10V 2.5V @ 250µA 130nC @ 4.5V 11360pF @ 50V 4.5V, 10V ±16V
IRLS3036TRLPBF
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RFQ
3,491
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Infineon Technologies MOSFET N-CH 60V 195A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 380W (Tc) N-Channel - 60V 195A (Tc) 2.4 mOhm @ 165A, 10V 2.5V @ 250µA 140nC @ 4.5V 11210pF @ 50V 4.5V, 10V ±16V