Power Dissipation (Max) :
Drain to Source Voltage (Vdss) :
Gate Charge (Qg) (Max) @ Vgs :
Input Capacitance (Ciss) (Max) @ Vds :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
GLOBAL STOCKS
AUIRL3705ZSTRL
RFQ
VIEW
RFQ
2,537
In-stock
Infineon Technologies MOSFET N-CH 55V 75A D2PAK HEXFET® Discontinued at Digi-Key Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 130W (Tc) N-Channel - 55V 75A (Tc) 8 mOhm @ 52A, 10V 3V @ 250µA 60nC @ 5V 2880pF @ 25V 4.5V, 10V ±16V
IRL3705ZSTRL
RFQ
VIEW
RFQ
3,317
In-stock
Infineon Technologies MOSFET N-CH 55V 75A D2PAK HEXFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) - Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 130W (Tc) N-Channel - 55V 75A (Tc) 8 mOhm @ 52A, 10V 3V @ 250µA 60nC @ 5V 2880pF @ 25V 4.5V, 10V ±16V
IRL1404ZSTRLPBF
RFQ
VIEW
RFQ
1,725
In-stock
Infineon Technologies MOSFET N-CH 40V 75A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 230W (Tc) N-Channel - 40V 75A (Tc) 3.1 mOhm @ 75A, 10V 2.7V @ 250µA 110nC @ 5V 5080pF @ 25V 4.5V, 10V ±16V
IRL3705ZSTRLPBF
RFQ
VIEW
RFQ
3,033
In-stock
Infineon Technologies MOSFET N-CH 55V 75A D2PAK HEXFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D2PAK 130W (Tc) N-Channel - 55V 75A (Tc) 8 mOhm @ 52A, 10V 3V @ 250µA 60nC @ 5V 2880pF @ 25V 4.5V, 10V ±16V