- Part Status :
- Operating Temperature :
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- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
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7 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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1,128
In-stock
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Infineon Technologies | MOSFET N-CH 60V 100A 5X6 PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) | 3.6W (Ta), 160W (Tc) | N-Channel | - | 60V | 20A (Ta), 100A (Tc) | 4.4 mOhm @ 50A, 10V | 2.5V @ 150µA | 90nC @ 10V | 5360pF @ 25V | 4.5V, 10V | ±16V | |||
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2,729
In-stock
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Infineon Technologies | MOSFET N-CH 60V 100A 8-PQFN | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 8-PowerVDFN | PQFN (5x6) | 3.6W (Ta), 160W (Tc) | N-Channel | - | 60V | 20A (Ta), 100A (Tc) | 4.4 mOhm @ 50A, 10V | 2.5V @ 150µA | 90nC @ 10V | 5360pF @ 25V | 4.5V, 10V | ±16V | |||
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1,871
In-stock
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Infineon Technologies | MOSFET N-CH 60V 240A D2PAK-7 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-7, D²Pak (6 Leads + Tab), TO-263CB | D2PAK (7-Lead) | 380W (Tc) | N-Channel | - | 60V | 240A (Tc) | 1.9 mOhm @ 180A, 10V | 2.5V @ 250µA | 160nC @ 4.5V | 11270pF @ 50V | 4.5V, 10V | ±16V | |||
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1,390
In-stock
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Infineon Technologies | MOSFET N-CH 60V 1.2A SOT23-3 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.25W (Ta) | N-Channel | - | 60V | 1.2A (Ta) | 480 mOhm @ 1.2A, 10V | 2.5V @ 25µA | 0.67nC @ 4.5V | 64pF @ 25V | 4.5V, 10V | ±16V | |||
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703
In-stock
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Infineon Technologies | MOSFET N-CH 60V 50A DPAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | 143W (Tc) | N-Channel | - | 60V | 50A (Tc) | 6.8 mOhm @ 50A, 10V | 2.5V @ 100µA | 49nC @ 4.5V | 3779pF @ 50V | 4.5V, 10V | ±16V | |||
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2,134
In-stock
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Infineon Technologies | MOSFET N-CH 60V 2.7A SOT-23-3 | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | Micro3™/SOT-23 | 1.25W (Ta) | N-Channel | - | 60V | 2.7A (Ta) | 92 mOhm @ 2.7A, 10V | 2.5V @ 25µA | 2.5nC @ 4.5V | 290pF @ 25V | 4.5V, 10V | ±16V | |||
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VIEW |
3,491
In-stock
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Infineon Technologies | MOSFET N-CH 60V 195A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 380W (Tc) | N-Channel | - | 60V | 195A (Tc) | 2.4 mOhm @ 165A, 10V | 2.5V @ 250µA | 140nC @ 4.5V | 11210pF @ 50V | 4.5V, 10V | ±16V | |||
