- Manufacture :
- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
3,742
In-stock
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Infineon Technologies | MOSFET N-CH 100V 36A D2PAK | HEXFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 140W (Tc) | N-Channel | - | 100V | 36A (Tc) | 44 mOhm @ 18A, 10V | 2V @ 250µA | 74nC @ 5V | 1800pF @ 25V | 4V, 10V | ±16V | |||
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VIEW |
2,216
In-stock
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Infineon Technologies | MOSFET N-CH 100V 36A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 140W (Tc) | N-Channel | - | 100V | 36A (Tc) | 44 mOhm @ 18A, 10V | 2V @ 250µA | 74nC @ 5V | 1800pF @ 25V | 4V, 10V | ±16V | |||
|
VIEW |
3,345
In-stock
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ON Semiconductor | MOSFET N-CH 100V 39A TO-263AB | Automotive, AEC-Q101, UltraFET™ | Last Time Buy | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 183W (Tj) | N-Channel | - | 100V | 39A (Tc) | 35 mOhm @ 39A, 10V | 3V @ 250µA | 63nC @ 10V | 1810pF @ 25V | 4.5V, 10V | ±16V | |||
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VIEW |
1,237
In-stock
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Infineon Technologies | MOSFET N-CH 100V 55A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 3.8W (Ta), 200W (Tc) | N-Channel | - | 100V | 55A (Tc) | 26 mOhm @ 29A, 10V | 2V @ 250µA | 140nC @ 5V | 3700pF @ 25V | 4V, 10V | ±16V | |||
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VIEW |
2,634
In-stock
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ON Semiconductor | MOSFET N-CH 100V 51A D2PAK | UltraFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 180W (Tc) | N-Channel | - | 100V | 51A (Tc) | 26 mOhm @ 51A, 10V | 3V @ 250µA | 86nC @ 10V | 2400pF @ 25V | 4.5V, 10V | ±16V | |||
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VIEW |
794
In-stock
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ON Semiconductor | MOSFET N CH 100V 51A TO-263AB | UltraFET™ | Last Time Buy | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 180W (Tc) | N-Channel | - | 100V | 51A (Tc) | 26 mOhm @ 51A, 10V | 3V @ 250µA | 86nC @ 10V | 2400pF @ 25V | 10V | ±16V | |||
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VIEW |
2,873
In-stock
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ON Semiconductor | MOSFET N-CH 100V 75A D2PAK | Automotive, AEC-Q101, UltraFET™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D²PAK (TO-263AB) | 310W (Tc) | N-Channel | - | 100V | 75A (Tc) | 14 mOhm @ 75A, 10V | 3V @ 250µA | 153nC @ 10V | 4400pF @ 25V | 4.5V, 10V | ±16V | |||
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VIEW |
2,814
In-stock
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Infineon Technologies | MOSFET N-CH 100V 180A D2PAK | HEXFET® | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 175°C (TJ) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | 370W (Tc) | N-Channel | - | 100V | 180A (Tc) | 4.3 mOhm @ 110A, 10V | 2.5V @ 250µA | 130nC @ 4.5V | 11360pF @ 50V | 4.5V, 10V | ±16V | |||
