Drain to Source Voltage (Vdss) :
Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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Diodes Incorporated MOSFET N-CH 60V POWERDI5060-8 Automotive, AEC-Q101 Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PowerDI5060-8 2.8W (Ta), 136W (Tc) N-Channel - 60V 11.76A (Ta), 89.5A (Tc) 10 mOhm @ 20A, 10V 2V @ 250µA 15.6nC @ 4.5V 1925pF @ 30V 4.5V, 10V ±16V
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ON Semiconductor PMOS PWR56 40V 8 MOHM Automotive, AEC-Q101, PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN 8-DFN (5.1x6.3) 107W (Tj) P-Channel - 40V 65A (Tc) 8 mOhm @ 65A, 10V 3V @ 250µA 67nC @ 10V 3360pF @ 20V 4.5V, 10V ±16V
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Infineon Technologies MOSFET N-CH 8TDSON Automotive, AEC-Q101, OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 48W (Tc) N-Channel - 40V 40A (Tc) 4.8 mOhm @ 20A, 10V 2V @ 17µA 29nC @ 10V 1560pF @ 25V 4.5V, 10V ±16V
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Infineon Technologies MOSFET N-CH 8TDSON Automotive, AEC-Q101, OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount 8-PowerTDFN PG-TSDSON-8 71W (Tc) N-Channel - 40V 40A (Tc) 2.8 mOhm @ 20A, 10V 2V @ 30µA 52nC @ 10V 2800pF @ 25V 4.5V, 10V ±16V
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