Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPB100N06S3L-03
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3,061
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Infineon Technologies MOSFET N-CH 55V 100A TO263-3-2 OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 300W (Tc) N-Channel - 55V 100A (Tc) 2.7 mOhm @ 80A, 10V 2.2V @ 230µA 550nC @ 10V 26240pF @ 25V 5V, 10V ±16V
IPB80N06S3L-06
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1,820
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Infineon Technologies MOSFET N-CH 55V 80A TO-263 OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 136W (Tc) N-Channel - 55V 80A (Tc) 5.6 mOhm @ 56A, 10V 2.2V @ 80µA 196nC @ 10V 9417pF @ 25V 5V, 10V ±16V
IPB80N06S3L-05
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RFQ
3,289
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Infineon Technologies MOSFET N-CH 55V 80A TO-263 OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 165W (Tc) N-Channel - 55V 80A (Tc) 4.5 mOhm @ 69A, 10V 2.2V @ 115µA 273nC @ 10V 13060pF @ 25V 5V, 10V ±16V
IPB45N06S3L-13
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RFQ
3,583
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Infineon Technologies MOSFET N-CH 55V 45A TO-263 OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 65W (Tc) N-Channel - 55V 45A (Tc) 13.1 mOhm @ 26A, 10V 2.2V @ 30µA 75nC @ 10V 3600pF @ 25V 5V, 10V ±16V
IPB100N06S3L-04
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RFQ
2,992
In-stock
Infineon Technologies MOSFET N-CH 55V 100A TO-263 OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 214W (Tc) N-Channel - 55V 100A (Tc) 3.5 mOhm @ 80A, 10V 2.2V @ 150µA 362nC @ 10V 17270pF @ 25V 5V, 10V ±16V
IPB80N03S4L03ATMA1
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RFQ
2,058
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Infineon Technologies MOSFET N-CH 30V 80A TO263-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB PG-TO263-3-2 94W (Tc) N-Channel - 30V 80A (Tc) 3.3 mOhm @ 80A, 10V 2.2V @ 45µA 75nC @ 10V 5100pF @ 25V 4.5V, 10V ±16V