Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type FET Feature Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPD70R360P7SAUMA1
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1,471
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Infineon Technologies MOSFET N-CH 700V 12.5A TO252-3 CoolMOS™ P7 Active Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 59.4W (Tc) N-Channel - 700V 12.5A (Tc) 360 mOhm @ 3A, 10V 3.5V @ 150µA 16.4nC @ 10V 517pF @ 400V 10V ±16V
IPD90N03S4L02ATMA1
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2,868
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Infineon Technologies MOSFET N-CH 30V 90A TO252-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 136W (Tc) N-Channel - 30V 90A (Tc) 2.2 mOhm @ 90A, 10V 2.2V @ 90µA 140nC @ 10V 9750pF @ 25V 4.5V, 10V ±16V
IPD70R900P7SAUMA1
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1,139
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Infineon Technologies MOSFET N-CH 700V 6A TO252-3 CoolMOS™ P7 Active Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 30.5W (Tc) N-Channel - 700V 6A (Tc) 900 mOhm @ 1.1A, 10V 3.5V @ 60µA 6.8nC @ 10V 211pF @ 400V 10V ±16V
IPD70R1K4P7SAUMA1
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3,780
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Infineon Technologies MOSFET N-CH 700V 4A TO252-3 CoolMOS™ P7 Active Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 23W (Tc) N-Channel - 700V 4A (Tc) 1.4 Ohm @ 700mA, 10V 3.5V @ 40µA 4.7nC @ 10V 158pF @ 400V 10V ±16V
IPD70R600P7SAUMA1
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2,659
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Infineon Technologies MOSFET N-CH 700V 8.5A TO252-3 CoolMOS™ P7 Active Cut Tape (CT) MOSFET (Metal Oxide) -40°C ~ 150°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 43W (Tc) N-Channel - 700V 8.5A (Tc) 600 mOhm @ 1.8A, 10V 3.5V @ 90µA 10.5nC @ 10V 364pF @ 400V 10V ±16V
IPD30N03S4L14ATMA1
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1,487
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Infineon Technologies MOSFET N-CH 30V 30A TO252-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 31W (Tc) N-Channel - 30V 30A (Tc) 13.6 mOhm @ 30A, 10V 2.2V @ 10µA 14nC @ 10V 980pF @ 25V 4.5V, 10V ±16V
IPD70N03S4L04ATMA1
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2,392
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Infineon Technologies MOSFET N-CH 30V 70A TO252-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 68W (Tc) N-Channel - 30V 70A (Tc) 4.3 mOhm @ 70A, 10V 2.2V @ 30µA 48nC @ 10V 3300pF @ 25V 4.5V, 10V ±16V
IPD30N03S4L09ATMA1
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1,423
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Infineon Technologies MOSFET N-CH 30V 30A TO252-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 42W (Tc) N-Channel - 30V 30A (Tc) 9 mOhm @ 30A, 10V 2.2V @ 13µA 20nC @ 10V 1520pF @ 15V 4.5V, 10V ±16V
IPD90N03S4L03ATMA1
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3,379
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Infineon Technologies MOSFET N-CH 30V 90A TO252-3 OptiMOS™ Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 94W (Tc) N-Channel - 30V 90A (Tc) 3.3 mOhm @ 90A, 10V 2.2V @ 45µA 75nC @ 10V 5100pF @ 25V 4.5V, 10V ±16V