Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SI4418DY-T1-GE3
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2,336
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Vishay Siliconix MOSFET N-CH 200V 2.3A 8-SOIC TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.5W (Ta) N-Channel 200V 2.3A (Ta) 130 mOhm @ 3A, 10V 4V @ 250µA 30nC @ 10V - 6V, 10V ±20V
SI4418DY-T1-E3
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RFQ
3,971
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Vishay Siliconix MOSFET N-CH 200V 2.3A 8-SOIC TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 1.5W (Ta) N-Channel 200V 2.3A (Ta) 130 mOhm @ 3A, 10V 4V @ 250µA 30nC @ 10V - 6V, 10V ±20V
FDC86244
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RFQ
3,296
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ON Semiconductor MOSFET N-CH 150V 2.3A 6SSOT PowerTrench® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount SOT-23-6 Thin, TSOT-23-6 SuperSOT™-6 1.6W (Ta) N-Channel 150V 2.3A (Ta) 144 mOhm @ 2.3A, 10V 4V @ 250µA 6nC @ 10V 345pF @ 75V 6V, 10V ±20V
SI7434DP-T1-GE3
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RFQ
3,318
In-stock
Vishay Siliconix MOSFET N-CH 250V 2.3A PPAK SO-8 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 1.9W (Ta) N-Channel 250V 2.3A (Ta) 155 mOhm @ 3.8A, 10V 4V @ 250µA 50nC @ 10V - 6V, 10V ±20V
SI7434DP-T1-E3
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RFQ
619
In-stock
Vishay Siliconix MOSFET N-CH 250V 2.3A PPAK SO-8 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount PowerPAK® SO-8 PowerPAK® SO-8 1.9W (Ta) N-Channel 250V 2.3A (Ta) 155 mOhm @ 3.8A, 10V 4V @ 250µA 50nC @ 10V - 6V, 10V ±20V