Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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IPB136N08N3 G
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1,150
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Infineon Technologies MOSFET N-CH 80V 45A TO263-3 OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 79W (Tc) N-Channel 80V 45A (Tc) 13.6 mOhm @ 45A, 10V 3.5V @ 33µA 25nC @ 10V 1730pF @ 40V 6V, 10V ±20V
IPB097N08N3 G
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2,726
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Infineon Technologies MOSFET N-CH 80V 70A TO263-3 OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-263-3, D²Pak (2 Leads + Tab), TO-263AB D²PAK (TO-263AB) 100W (Tc) N-Channel 80V 70A (Tc) 9.7 mOhm @ 46A, 10V 3.5V @ 46µA 35nC @ 10V 2410pF @ 40V 6V, 10V ±20V
IPD053N08N3GBTMA1
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RFQ
3,334
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Infineon Technologies MOSFET N-CH 80V 90A TO252-3 OptiMOS™ Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 175°C (TJ) Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63 PG-TO252-3 150W (Tc) N-Channel 80V 90A (Tc) 5.3 mOhm @ 90A, 10V 3.5V @ 90µA 69nC @ 10V 4750pF @ 40V 6V, 10V ±20V
SI4480DY-T1-E3
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3,077
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Vishay Siliconix MOSFET N-CH 80V 6A 8-SOIC - Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount 8-SOIC (0.154", 3.90mm Width) 8-SO 2.5W (Ta) N-Channel 80V - 35 mOhm @ 6A, 10V 2V @ 250µA (Min) 50nC @ 10V - 6V, 10V ±20V