- Series :
- Power Dissipation (Max) :
- Current - Continuous Drain (Id) @ 25°C :
- Rds On (Max) @ Id, Vgs :
- Gate Charge (Qg) (Max) @ Vgs :
- Applied Filters :
3 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,048
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 2.6A PPAK SO-8 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | 1.9W (Ta) | N-Channel | 200V | 2.6A (Ta) | 130 mOhm @ 4.1A, 10V | 4V @ 250µA | 30nC @ 10V | - | 6V, 10V | ±20V | |||
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|
VIEW |
1,156
In-stock
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Vishay Siliconix | MOSFET N-CH 200V 2.6A PPAK SO-8 | TrenchFET® | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | 1.9W (Ta) | N-Channel | 200V | 2.6A (Ta) | 130 mOhm @ 4.1A, 10V | 4V @ 250µA | 30nC @ 10V | - | 6V, 10V | ±20V | |||
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VIEW |
1,532
In-stock
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Vishay Siliconix | MOSFET N-CH 60V 30A PPAK SO-8 | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | PowerPAK® SO-8 | 5.4W (Ta), 96W (Tc) | N-Channel | 60V | 30A (Tc) | 7.8 mOhm @ 19.7A, 10V | 4V @ 250µA | 135nC @ 10V | 6900pF @ 30V | 6V, 10V | ±20V | |||
