- Part Status :
- Supplier Device Package :
- Power Dissipation (Max) :
- FET Type :
- Vgs(th) (Max) @ Id :
- Gate Charge (Qg) (Max) @ Vgs :
- Input Capacitance (Ciss) (Max) @ Vds :
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6 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,662
In-stock
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Panasonic Electronic Components | MOSFET N-CH 30V 1A MINI-PWR | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-243AA | MiniP3-F1 | 1W (Ta) | N-Channel | - | 30V | 1A (Ta) | 600 mOhm @ 500mA, 10V | 2V @ 1mA | - | 87pF @ 10V | 4V, 10V | ±20V | ||||
VIEW |
3,488
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CH 100V 1A PW-MINI | - | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-243AA | PW-MINI | 500mW (Ta) | N-Channel | - | 100V | 1A (Ta) | 700 mOhm @ 500mA, 10V | 2V @ 1mA | 6.3nC @ 10V | 140pF @ 10V | 4V, 10V | ±20V | ||||
VIEW |
1,150
In-stock
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Rohm Semiconductor | MOSFET P-CH 30V 1A TSMT6 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | TSMT6 (SC-95) | 1.25W (Ta) | P-Channel | Schottky Diode (Isolated) | 30V | 1A (Ta) | 400 mOhm @ 1A, 10V | 2.5V @ 1mA | 1.7nC @ 5V | 90pF @ 10V | 4V, 10V | ±20V | ||||
VIEW |
3,330
In-stock
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Rohm Semiconductor | MOSFET P-CH 30V 1A TUMT3 | - | Not For New Designs | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 3-SMD, Flat Leads | TUMT3 | 800mW (Ta) | P-Channel | - | 30V | 1A (Ta) | 350 mOhm @ 1A, 10V | - | 1.9nC @ 5V | 120pF @ 10V | 4V, 10V | ±20V | ||||
VIEW |
1,891
In-stock
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Rohm Semiconductor | MOSFET N-CH 100V 1.0A TSMT3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SC-96 | TSMT3 | 540mW (Ta) | N-Channel | - | 100V | 1A (Ta) | 520 mOhm @ 1A, 10V | 2.5V @ 1mA | 3.5nC @ 5V | 140pF @ 25V | 4V, 10V | ±20V | ||||
VIEW |
1,493
In-stock
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ON Semiconductor | MOSFET N-CH 100V 1A CPH3 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | 3-CPH | 1W (Ta) | N-Channel | - | 100V | 1A (Ta) | 785 mOhm @ 1A, 10V | 2.6V @ 1mA | 3.4nC @ 10V | 155pF @ 20V | 4V, 10V | ±20V |