Picture Mfr Part # QUANTITY Inventory MANUFACTURE Description Package Series Part Status Packaging Technology Operating Temperature Mounting Type Package / Case Supplier Device Package Power Dissipation (Max) FET Type Drain to Source Voltage (Vdss) Current - Continuous Drain (Id) @ 25°C Rds On (Max) @ Id, Vgs Vgs(th) (Max) @ Id Gate Charge (Qg) (Max) @ Vgs Input Capacitance (Ciss) (Max) @ Vds Drive Voltage (Max Rds On, Min Rds On) Vgs (Max)
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SI2351DS-T1-E3
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1,805
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Vishay Siliconix MOSFET P-CH 20V 2.8A SOT23-3 TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 1W (Ta), 2.1W (Tc) P-Channel 20V 2.8A (Tc) 115 mOhm @ 2.4A, 4.5V 1.5V @ 250µA 5.1nC @ 5V 250pF @ 10V 2.5V, 4.5V ±12V
TN0200K-T1-E3
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RFQ
3,895
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Vishay Siliconix MOSFET N-CH 20V SOT23-3 TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 350mW (Ta) N-Channel 20V - 400 mOhm @ 600mA, 4.5V 1V @ 50µA 2nC @ 4.5V - 2.5V, 4.5V ±8V
SI2351DS-T1-GE3
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RFQ
1,888
In-stock
Vishay Siliconix MOSFET P-CH 20V 2.8A SOT23-3 TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 1W (Ta), 2.1W (Tc) P-Channel 20V 2.8A (Tc) 115 mOhm @ 2.4A, 4.5V 1.5V @ 250µA 5.1nC @ 5V 250pF @ 10V 2.5V, 4.5V ±12V
TP0101K-T1-E3
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RFQ
1,151
In-stock
Vishay Siliconix MOSFET P-CH 20V 0.58A SOT23-3 TrenchFET® Obsolete Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 350mW (Ta) P-Channel 20V - 650 mOhm @ 580mA, 4.5V 1V @ 50µA 2.2nC @ 4.5V - 2.5V, 4.5V ±8V
SI2302CDS-T1-GE3
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RFQ
2,460
In-stock
Vishay Siliconix MOSFET N-CH 20V 2.6A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 710mW (Ta) N-Channel 20V 2.6A (Ta) 57 mOhm @ 3.6A, 4.5V 850mV @ 250µA 5.5nC @ 4.5V - 2.5V, 4.5V ±8V
SI2301BDS-T1-GE3
RFQ
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RFQ
1,752
In-stock
Vishay Siliconix MOSFET P-CH 20V 2.2A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 700mW (Ta) P-Channel 20V 2.2A (Ta) 100 mOhm @ 2.8A, 4.5V 950mV @ 250µA 10nC @ 4.5V 375pF @ 6V 2.5V, 4.5V ±8V
SI2334DS-T1-GE3
RFQ
VIEW
RFQ
3,372
In-stock
Vishay Siliconix MOSFET N-CH 30V 4.9A SOT-23 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 1.3W (Ta), 1.7W (Tc) N-Channel 30V 4.9A (Tc) 44 mOhm @ 4.2A, 4.5V 1V @ 250µA 10nC @ 4.5V 634pF @ 15V 2.5V, 4.5V ±8V
SI2301BDS-T1-E3
RFQ
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RFQ
1,994
In-stock
Vishay Siliconix MOSFET P-CH 20V 2.2A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 700mW (Ta) P-Channel 20V 2.2A (Ta) 100 mOhm @ 2.8A, 4.5V 950mV @ 250µA 10nC @ 4.5V 375pF @ 6V 2.5V, 4.5V ±8V
SI2302CDS-T1-E3
RFQ
VIEW
RFQ
3,854
In-stock
Vishay Siliconix MOSFET N-CH 20V 2.6A SOT-23 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 710mW (Ta) N-Channel 20V 2.6A (Ta) 57 mOhm @ 3.6A, 4.5V 850mV @ 250µA 5.5nC @ 4.5V - 2.5V, 4.5V ±8V
SI2300DS-T1-GE3
RFQ
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RFQ
3,633
In-stock
Vishay Siliconix MOSFET N-CH 30V 3.6A SOT-23 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 1.1W (Ta), 1.7W (Tc) N-Channel 30V 3.6A (Tc) 68 mOhm @ 2.9A, 4.5V 1.5V @ 250µA 10nC @ 10V 320pF @ 15V 2.5V, 4.5V ±12V
SI2301CDS-T1-GE3
RFQ
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RFQ
2,698
In-stock
Vishay Siliconix MOSFET P-CH 20V 3.1A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 860mW (Ta), 1.6W (Tc) P-Channel 20V 3.1A (Tc) 112 mOhm @ 2.8A, 4.5V 1V @ 250µA 10nC @ 4.5V 405pF @ 10V 2.5V, 4.5V ±8V
SI2301CDS-T1-E3
RFQ
VIEW
RFQ
3,679
In-stock
Vishay Siliconix MOSFET P-CH 20V 3.1A SOT23-3 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 860mW (Ta), 1.6W (Tc) P-Channel 20V 3.1A (Tc) 112 mOhm @ 2.8A, 4.5V 1V @ 250µA 10nC @ 4.5V 405pF @ 10V 2.5V, 4.5V ±8V
SI2302DDS-T1-GE3
RFQ
VIEW
RFQ
3,708
In-stock
Vishay Siliconix MOSFET N-CHAN 20V SOT23 TrenchFET® Active Cut Tape (CT) MOSFET (Metal Oxide) -55°C ~ 150°C (TJ) Surface Mount TO-236-3, SC-59, SOT-23-3 SOT-23-3 (TO-236) 710mW (Ta) N-Channel 20V 2.9A (Tj) 57 mOhm @ 3.6A, 4.5V 850mV @ 250µA 5.5nC @ 4.5V - 2.5V, 4.5V ±8V