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- FET Type :
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12 results
Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
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VIEW |
2,763
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 9.5A UF6 | U-MOSV | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | UF6 | 1W (Ta) | P-Channel | - | 20V | 9.5A (Ta) | 22.1 mOhm @ 3A, 4.5V | 1V @ 1mA | 15nC @ 4.5V | 1100pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
2,423
In-stock
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Diodes Incorporated | MOSFET N-CH 20V 3.3A SOT-26 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | SOT-23-6 | SOT-26 | 1W (Ta) | N-Channel | - | 20V | 3.3A (Ta) | 55 mOhm @ 6A, 4.5V | 1V @ 250µA | - | 555pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
727
In-stock
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Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A UF6 | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-SMD, Flat Leads | UF6 | 1W (Ta) | P-Channel | - | 20V | 6A (Ta) | 22.5 mOhm @ 6A, 4.5V | 1V @ 1mA | 23.1nC @ 4.5V | 1650pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
1,380
In-stock
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Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A 2-2AA1A | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | - | 20V | 6A (Ta) | 23.1 mOhm @ 4A, 4.5V | 1V @ 1mA | 24.8nC @ 4.5V | 1800pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
702
In-stock
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Toshiba Semiconductor and Storage | MOSFET P CH 20V 6A 2-2AA1A | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | - | 20V | 6A (Ta) | 32.4 mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 10V | 840pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
1,562
In-stock
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Toshiba Semiconductor and Storage | MOSFET N-CHANNEL 20V 4A SOT23F | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | - | 20V | 4A (Ta) | 33 mOhm @ 4A, 4.5V | 1V @ 1mA | 3.6nC @ 4.5V | 410pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
1,851
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 6A SOT23F | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | - | 20V | 6A (Ta) | 29.8 mOhm @ 3A, 4.5V | 1V @ 1mA | 12.8nC @ 4.5V | 840pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
3,080
In-stock
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Toshiba Semiconductor and Storage | SMALL LOW ON RESISTANCE MOSFET | U-MOSVII-H | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | N-Channel | - | 20V | 3A (Ta) | 71 mOhm @ 3A, 4.5V | 1V @ 1mA | 2nC @ 4V | 153pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
3,375
In-stock
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Toshiba Semiconductor and Storage | MOSFET P CH 20V 4A SOT-23F | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | - | 20V | 4A (Ta) | 55 mOhm @ 3A, 4.5V | 1V @ 1mA | 10.4nC @ 4.5V | 630pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
831
In-stock
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Alpha & Omega Semiconductor Inc. | MOSFET P-CH 20V 2.9A SOT23 | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | SOT-23-3L | 1W (Ta) | P-Channel | - | 20V | 2.9A (Ta) | 70 mOhm @ 3.5A, 4.5V | 1V @ 250µA | 11nC @ 4.5V | 745pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
2,868
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 6A SOT23F | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-3 Flat Leads | SOT-23F | 1W (Ta) | P-Channel | - | 20V | 3.9A (Ta) | 93 mOhm @ 1.5A, 4.5V | 1V @ 1mA | 4.6nC @ 4.5V | 290pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
712
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 10A UDFN6B | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-UDFNB (2x2) | 1W (Ta) | P-Channel | - | 20V | 10A (Ta) | 15.3 mOhm @ 4A, 4.5V | 1V @ 1mA | 29.9nC @ 4.5V | 2600pF @ 10V | 1.5V, 4.5V | ±8V |