- Manufacture :
- Series :
- Part Status :
- Operating Temperature :
- Supplier Device Package :
- Current - Continuous Drain (Id) @ 25°C :
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8 results
| Picture | Mfr Part # | QUANTITY | Inventory | MANUFACTURE | Description | Package | Series | Part Status | Packaging | Technology | Operating Temperature | Mounting Type | Package / Case | Supplier Device Package | Power Dissipation (Max) | FET Type | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Drive Voltage (Max Rds On, Min Rds On) | Vgs (Max) | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VIEW |
1,998
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 5A TSM | U-MOSV | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | P-Channel | 20V | 5A (Ta) | 31 mOhm @ 4A, 4.5V | 1V @ 1mA | 19nC @ 4.5V | 1170pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
3,983
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 5.2A TSM | U-MOSV | Obsolete | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | TO-236-3, SC-59, SOT-23-3 | TSM | 700mW (Ta) | P-Channel | 20V | 5.2A (Ta) | 46 mOhm @ 3A, 4.5V | 1V @ 1mA | 8.1nC @ 4.5V | 640pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
2,667
In-stock
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ON Semiconductor | MOSFET P-CH 20V 3.5A 6-WFDN | µCool™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-WDFN Exposed Pad | 6-WDFN (2x2) | 700mW (Ta) | P-Channel | 20V | 3.5A (Ta) | 40 mOhm @ 3A, 4.5V | 1V @ 250µA | 15.7nC @ 4.5V | 1329pF @ 16V | 1.5V, 4.5V | ±8V | |||
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VIEW |
1,339
In-stock
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ON Semiconductor | MOSFET P-CH 20V 4A 6UDFN | µCool™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-UDFN (2x2) | 700mW (Ta) | P-Channel | 20V | 4A (Ta) | 29 mOhm @ 6.4A, 4.5V | 1V @ 250µA | 29nC @ 4.5V | 2600pF @ 15V | 1.5V, 4.5V | ±8V | |||
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VIEW |
3,393
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CH 20V 5.5A VS-6 | U-MOSV | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C (TJ) | Surface Mount | SOT-23-6 Thin, TSOT-23-6 | VS-6 (2.9x2.8) | 700mW (Ta) | P-Channel | 20V | 5.5A (Ta) | 40 mOhm @ 2.8A, 4.5V | 1V @ 1mA | 10nC @ 5V | 700pF @ 10V | 1.5V, 4.5V | ±8V | |||
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VIEW |
1,433
In-stock
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ON Semiconductor | MOSFET P-CH 20V 8.2A 6UDFN | µCool™ | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-UDFN (2x2) | 700mW (Ta) | P-Channel | 20V | 5.1A (Ta) | 18 mOhm @ 7A, 4.5V | 1V @ 250µA | 28nC @ 4.5V | 2240pF @ 15V | 1.5V, 4.5V | ±8V | |||
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VIEW |
1,440
In-stock
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Toshiba Semiconductor and Storage | MOSFET P-CHANNEL 12V 4.8A ES6 | U-MOSVI | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | 150°C | Surface Mount | SOT-563, SOT-666 | ES6 | 700mW (Ta) | P-Channel | 12V | 4.8A (Ta) | 32 mOhm @ 3.5A, 4.5V | 1V @ 1mA | 12.7nC @ 4.5V | 1040pF @ 12V | 1.5V, 4.5V | ±8V | |||
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|
VIEW |
3,652
In-stock
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ON Semiconductor | MOSFET P-CH 20V 8.2A UDFN | - | Active | Cut Tape (CT) | MOSFET (Metal Oxide) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 6-UDFN (2x2) | 700mW (Ta) | P-Channel | 20V | 5.1A (Ta) | 18 mOhm @ 7A, 4.5V | 1V @ 250µA | 28nC @ 4.5V | 2240pF @ 15V | 1.5V, 4.5V | ±8V | |||
